The simple approach to determination of active diffused phosphorus density in silicon

dc.contributor.author	Sasani, M.
dc.date.accessioned	2017-05-28T17:31:14Z
dc.date.available	2017-05-28T17:31:14Z
dc.date.issued	2004
dc.identifier.citation	The simple approach to determination of active diffused phosphorus density in silicon / M. Sasani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 22-25. — Бібліогр.: 20 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 61.72.Tt, 66.30.Lw
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118109
dc.description.abstract	The diffusion of Phosphorus in silicon using a POCl₃ source has been considered. In the base of Fair-Tsai model of P-diffusion an empirical equation for calculation of active diffused phosphorus density (Qel), is proposed. In this equation, a relationship between (Qel), diffusion time, temperature and junction depth of P-diffused layer (Xj), is presented. The value of sheet resistance (Rs), which is taken from theoretical determination at 900°C, has a good agreement with experimental result.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	The simple approach to determination of active diffused phosphorus density in silicon	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA