Nucleation, growth and transformation of microdefects in FZ-Si

dc.contributor.author	Talanin, V.I.
dc.contributor.author	Talanin, I.E.
dc.date.accessioned	2017-05-28T17:30:23Z
dc.date.available	2017-05-28T17:30:23Z
dc.date.issued	2004
dc.identifier.citation	Nucleation, growth and transformation of microdefects in FZ-Si / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 16-21. — Бібліогр.: 50 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 61.72.Bb; 61.72.Ji; 61.72.Yx
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118108
dc.description.abstract	The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at high temperatures is hampered by an entropy barrier. Established is that the process of microdefects formation in silicon proceeds simultaneously by two independent mechanisms: the vacancy and interstitial ones.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Nucleation, growth and transformation of microdefects in FZ-Si	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA