Classification of microdefects in semiconducting silicon

dc.contributor.author	Talanin, V.I.
dc.contributor.author	Talanin, I.E.
dc.date.accessioned	2017-05-28T16:39:55Z
dc.date.available	2017-05-28T16:39:55Z
dc.date.issued	2003
dc.identifier.citation	Classification of microdefects in semiconducting silicon / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 431-436. — Бібліогр.: 40 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 61.72.Bb; 61.72.Ji; 61.72.Yx
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118081
dc.description.abstract	On the basis of experimental analysis (preferential etching, transmission electron microscopy) of the dislocation-free silicon single crystals grown by floating-zone method (FZ-Si) and Czochralski method (Cz-Si), a classification of grown-in microdefects was compiled. The suggested classification is founded on the heterogeneous formation mechanism of grown-in microdefects, which was justified earlier by us. The suggested classification is valid for crystals of either small or large diameter.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Classification of microdefects in semiconducting silicon	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA