Unipolar injection currents in Bi₄Ge₃O₁₂ crystals

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
→
Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 4
→
Переглянути статтю

dc.contributor.author	Bochkova, T.M.
dc.contributor.author	Plyaka, S.N.
dc.contributor.author	Sokolyanskii, G.Ch.
dc.date.accessioned	2017-05-28T16:34:17Z
dc.date.available	2017-05-28T16:34:17Z
dc.date.issued	2003
dc.identifier.citation	Unipolar injection currents in Bi₄Ge₃O₁₂ crystals / T.M. Bochkova, S.N. Plyaka, G.Ch. Sokolyanskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 461-464. — Бібліогр.: 23 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 72.20 Iv
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118075
dc.description.abstract	Current-voltage characteristics of bismuth orthogermanate (Bi₄Ge₃O₁₂) single crystals have been measured at different temperatures under conditions of unipolar injection of charge carriers. It has been found that conduction is characterized by the existence of two channels of the percolation. The temperature dependencies of the conductivity, mobility and concentration of the electrons and holes are considered. The obtained results are discussed in terms of hopping transport model of charge carriers in doped heavily compensated semiconductors.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Unipolar injection currents in Bi₄Ge₃O₁₂ crystals	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA