Change of carrier spectrum in layer semiconductors caused by strong electromagnetic wave field

dc.contributor.author	Lukiyanets, B.A.
dc.date.accessioned	2017-05-28T05:53:17Z
dc.date.available	2017-05-28T05:53:17Z
dc.date.issued	2003
dc.identifier.citation	Change of carrier spectrum in layer semiconductors caused by strong electromagnetic wave field / B.A. Lukiyanets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 156-159. — Бібліогр.: 4 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 71.22
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118007
dc.description.abstract	Spectrum of carriers in layer semiconductors under action of strong electromagnetic field is analyzed. It is shown that obtained modification of the spectrum qualitatively differs from modification in analogous problem in excitonic dielectric or superconductor with the parabolic dispersion law of carriers.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Change of carrier spectrum in layer semiconductors caused by strong electromagnetic wave field	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA