Electric and dielectric properties of glasses of Cu-Sb-S-I system

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
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Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 1
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dc.contributor.author	Rubish, V.M.
dc.date.accessioned	2017-05-27T18:06:09Z
dc.date.available	2017-05-27T18:06:09Z
dc.date.issued	2003
dc.identifier.citation	Electric and dielectric properties of glasses of Cu-Sb-S-I system / V.M. Rubish // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 76-80. — Бібліогр.: 16 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 72.15.Cz, 73.61.Jc, 77.22.-d
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117961
dc.description.abstract	D.c. and a.c. conductivity (d(0) and d(w )) and dielectric parameters (d and tgd ) of Cu-Sb-S-I system glasses are investigated in 1.010⁴ - 6.010⁷ Hz frequency range and 170-400 K temperature interval. In the glasses of SbSI-CuSbS₂ system the d.c. conductivity along delocalized states prevails. A.c. conductivity is explained by a combinated hopping mechanism of charge transfer by bipolarons and "simple" polarons. A high concentration of charge carriers and availability of dipole structural units Cu⁺S⁻SbS₂/₂ in the glass matrix define dielectric proporties of glasses.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Electric and dielectric properties of glasses of Cu-Sb-S-I system	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA