Resistance thermometers based on the germanium films

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2
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Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 1
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dc.contributor.author	Mitin, V.F.
dc.date.accessioned	2017-05-27T16:10:59Z
dc.date.available	2017-05-27T16:10:59Z
dc.date.issued	1999
dc.identifier.citation	Resistance thermometers based on the germanium films / Mitin V.F. // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 115-123. — Бібліогр.: 17 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 73.61.J, 72.20, 85.30, 07.07.D
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117931
dc.description.abstract	The latest achievements in the field of development of resistance thermometers based on the germanium films on gallium arsenide are presented and summarized. Basic models of Ge film thermometers, which cover the temperature range from 0.02 to 500 K, are considered. Characteristics of the thermometers in high magnetic fields and under the action of ionizing irradiation (neutrons and gamma-rays) are presented.	uk_UA
dc.description.sponsorship	The author would like to express his gratitude to Prof. M.Oszwaldowski (Politechnika Poznanska, Poznan, Poland), Prof. J. Klamut (International Laboratory of High Magnetic Fields and Low Temperatures in Wroclaw, Poland) and to Dr.I.Yu. Nemish (Special Design Office of ISP NASU, Kiev, Ukraine) for collaboration and assistance in thermometer investigations in high magnetic fields and at low temperatures. The author is also grateful to Prof.G.G. Ihas (University of Florida, USA) for examination of thermometers at ultra-low temperatures (25 mK-4.2 K) and in high magnetic fields. The author would like to thank Dr.Yu.P. Filippov (Joint Institute for Nuclear Research, Dubna, Russia) for the interest in germanium film thermometers and investigation of thermometers under the influence of radiation and for helpful discussions. The author is thankful to Dr. N. S. Boltovets (Research Inst. «Orion», Kiev) for collaboration during design of the case, micropackaging and fabrication of thermometers, and to V.V. Kholevchuk (ISP NASU, Kiev) for assistance in conduction of the study. The author thanks Prof. R.V. Konakova and Prof.E.F. Venger (ISP NASU, Kiev) for the support of this research and design work and for helpful discussions.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Resistance thermometers based on the germanium films	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA