The influence of irradiation by electrons and γ-quanta on photoelectrical and optical properties of epitaxial Pb₁₋xMnxTe film

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10
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Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 2
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dc.contributor.author	Abbasov, Sh.M.
dc.contributor.author	Nuruyev, I.R.
dc.contributor.author	Tagiyev, T.B.
dc.contributor.author	Agaverdiyeva, G.T.
dc.contributor.author	Kerimova, T.I.
dc.contributor.author	Ismayilova, G.T.
dc.date.accessioned	2017-05-27T11:02:43Z
dc.date.available	2017-05-27T11:02:43Z
dc.date.issued	2007
dc.identifier.citation	The influence of irradiation by electrons and γ-quanta on photoelectrical and optical properties of epitaxial Pb₁₋xMnxTe film / Sh.M. Abbasov, I.R. Nuruyev*, T.B. Tagiyev, G.T. Agaverdiyeva, T.I. Kerimova,G.T. Ismayilova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 26-28. — Бібліогр.: 6 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 42.25.Bs, 61.82.Fk
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117888
dc.description.abstract	We have studied the effect of electron irradiation on photoelectrical and optical properties of Pb₁₋xMnxTe (0.01 ≤ x ≤ 0.05) epitaxial films containing 0.5…1 at. % of gallium with thicknesses of 1…5 µm, obtained by the method of molecular beam epitaxy on substrates BaF₂ (III).	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	The influence of irradiation by electrons and γ-quanta on photoelectrical and optical properties of epitaxial Pb₁₋xMnxTe film	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA