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Spin-dependent current in silicon p-n junction diodes
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 1
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Spin-dependent current in silicon p-n junction diodes
Інший ID:
PACS 73.20.-r, 73.40.-c, 85.30.Kk
Посилання:
Spin-dependent current in silicon p-n junction diodes/O.V. Tretyak, O.I. Kozonushchenko, K.V. Krivokhizha, A.S. Revenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 95-97. — Бібліогр.: 10 назв. — англ.
Дата:
2010
Переглядів:
668
Завантажень:
356
Анотація:
We have used electrically detected spin-dependent paramagnetic resonance to
investigate the non-equilibrium conductivity in a silicon diode. In order to create
paramagnetic centers, we used diode with a polished surface (that includes p-n junction).
The dependence of relative changes in the amplitude of a signal under resonance
conditions and the total value of current through the diode were investigated. We have
found the presence of inversion channel on the surface of p-n junction and proposed the
model of the influence of spin resonance on the channel conductivity. The upper value of
the time constant inherent to the spin-dependent process was determined as
approximately 10⁻⁶ s . The influence of the spin-dependent process on the charge state in
inversion channel has been discussed.
