Influence of polarization of conduction electrons in semiconductor on their light absorption

dc.contributor.author	Severin, V.S.
dc.date.accessioned	2017-05-26T17:44:11Z
dc.date.available	2017-05-26T17:44:11Z
dc.date.issued	2011
dc.identifier.citation	Influence of polarization of conduction electrons in semiconductor on their light absorption / V.S. Severin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 445-451. — Бібліогр.: 19 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 77.22.Ch, Ej; 78.20.Bh, Ci, -e
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117795
dc.description.abstract	The influence of polarization of conduction electrons in semiconductor on their light absorption is examined. The Drude model is used for the description of an electron motion inside conduction band. Account of electron screening the external electric field essentially modifies the expression for the light absorption coefficient in comparison with that in the traditional theory. As a result, the absorption spectrum becomes “resonance” like.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Influence of polarization of conduction electrons in semiconductor on their light absorption	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA