Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium

dc.contributor.author	Boiko, I.I.
dc.date.accessioned	2017-05-26T16:19:34Z
dc.date.available	2017-05-26T16:19:34Z
dc.date.issued	2011
dc.identifier.citation	Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 357-361. — Бібліогр.: 8 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.72, 72.20
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117762
dc.description.abstract	Conductivity of p-Si and p-Ge is considered for the two-band model with due regard for mutual drag of light and heavy holes. It is shown that for small and moderate temperatures this drag significantly diminishes the drift velocity of light holes and, as a result, the whole conductivity of crystal. The drag effect considered here appears also in the form of non-monotonous dependences of conductivity on temperature and carrier concentration.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA