Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
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Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 1
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Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties

Bilozertseva, V.I. ; Khlyap, H.M. ; Shkumbatyuk, P.S. ; Dyakonenko, N.L. ; Mamaluy, A.O. ; Gaman, D.O.

Інший ID: PACS 61.46.-w, 73.63.-b

URI: http://dspace.nbuv.gov.ua/handle/123456789/117743

Посилання: Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties / V.I. Bilozertseva, H.M. Khlyap, P.S. Shkumbatyuk, N.L. Dyakonenko, A.O. Mamaluy, D.O. Gaman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 61-64. — Бібліогр.: 12 назв. — англ.

Дата: 2010

Завантажень: 286

Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties

Анотація:

The results of structural investigations and electric field-induced properties of thin (40–100 nm) Li-Bi-Se films grown on glass substrates by means of the resistive evaporation technique are reported. The experimental investigations of microstructure and phase composition of thin films by transmission electron microscopy (TEM) and electron diffraction methods are carried out. Тhe experimental current-voltage dependences and transport of charge carriers are discussed.

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