Показати простий запис статті
dc.contributor.author |
Bilozertseva, V.I. |
|
dc.contributor.author |
Khlyap, H.M. |
|
dc.contributor.author |
Shkumbatyuk, P.S. |
|
dc.contributor.author |
Dyakonenko, N.L. |
|
dc.contributor.author |
Mamaluy, A.O. |
|
dc.contributor.author |
Gaman, D.O. |
|
dc.date.accessioned |
2017-05-26T15:02:43Z |
|
dc.date.available |
2017-05-26T15:02:43Z |
|
dc.date.issued |
2010 |
|
dc.identifier.citation |
Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties / V.I. Bilozertseva, H.M. Khlyap, P.S. Shkumbatyuk, N.L. Dyakonenko, A.O. Mamaluy, D.O. Gaman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 61-64. — Бібліогр.: 12 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 61.46.-w, 73.63.-b |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/117743 |
|
dc.description.abstract |
The results of structural investigations and electric field-induced properties of
thin (40–100 nm) Li-Bi-Se films grown on glass substrates by means of the resistive
evaporation technique are reported. The experimental investigations of microstructure
and phase composition of thin films by transmission electron microscopy (TEM) and
electron diffraction methods are carried out. Тhe experimental current-voltage
dependences and transport of charge carriers are discussed. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
Файли у цій статті
Ця стаття з'являється у наступних колекціях
Показати простий запис статті