Silicon carbide defects and luminescence centers in current heated 6H-SiC

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
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Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 1
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Silicon carbide defects and luminescence centers in current heated 6H-SiC

Lee, S.W. ; Vlaskina, S.I. ; Vlaskin, V.I. ; Zaharchenko, I.V. ; Gubanov, V.A. ; Mishinova, G.N. ; Svechnikov, G.S. ; Rodionov, V.E. ; Podlasov, S.A.

Інший ID: PACS 71.55.Gs, 78.55.-m, Cr, 78.60.-b, 78.66.Hf

URI: http://dspace.nbuv.gov.ua/handle/123456789/117702

Посилання: Silicon carbide defects and luminescence centers in current heated 6H-SiC / S.W. Lee, S.I. Vlaskina, V.I. Vlaskin, I.V. Zaharchenko, V.A. Gubanov, G.N. Mishinova, G.S. Svechnikov, V.E. Rodionov, and S.A. Podlasov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 24-29. — Бібліогр.: 23 назв. — англ.

Дата: 2010

Завантажень: 384

Silicon carbide defects and luminescence centers in current heated 6H-SiC

Анотація:

At room temperature yellow photoluminescence with a broad peak of 2.13 eV is a well-known feature of boron-doped 6H-SiC. Usually yellow luminescence is regarded as recombination involving both the boron-related deep acceptor and donor level. But the nature of the deep level has not been clearly understood yet. We annealed 6H-SiC substrates by current in vacuum without boron injection at the temperature of 1350 and 1500 ºC. We received red and yellow luminescence in PL spectrum for the heated 6H-SiC. The luminescence was regarded as donor-acceptor pair recombination involving the deep aluminum acceptor related to the adjacent carbon vacancies and nitrogen donor or the formation of quantum well like regions of 3C-SiC in 6H-SiC matrix.

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