Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure
Репозиторій DSpace/Manakin
- Домашня сторінка
- →
- Фізико-технічні та математичні науки
- →
- Відділення фізики і астрономії
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16
- →
- Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 2
- →
- Переглянути статтю
JavaScript is disabled for your browser. Some features of this site may not work without it.
| dc.contributor.author | Semikina, T.V. | |
| dc.contributor.author | Mamykin, S.V. | |
| dc.contributor.author | Godlewski, M. | |
| dc.contributor.author | Luka, G. | |
| dc.contributor.author | Pietruszka, R. | |
| dc.contributor.author | Kopalko, K. | |
| dc.contributor.author | Krajewski, T.A. | |
| dc.contributor.author | Gierałtowska, S. | |
| dc.contributor.author | Wachnicki, L. | |
| dc.contributor.author | Shmyryeva, L.N. | |
| dc.date.accessioned | 2017-05-26T08:56:39Z | |
| dc.date.available | 2017-05-26T08:56:39Z | |
| dc.date.issued | 2013 | |
| dc.identifier.citation | ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure / T.V. Semikina, S.V. Mamykin, M. Godlewski, G. Luka, R. Pietruszka, K. Kopalko, T.A. Krajewski, S. Gieraltowska, L. Wachnicki, L.N. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 111-116. — Бібліогр.: 20 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 77.55.hf; 88.40.jm, jn, jp | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/117676 | |
| dc.description.abstract | ZnO films with high conductivity are obtained by atomic layer deposition for application in solar cells based on n CdS/ n CdTe / p Cu₁.₈S heterostructure. The parameters of solar cells with ZnO electrode are calculated from light and dark currentvoltage characteristics and compared with those obtained for structures with Mo contact. The advantages of ZnO electrode are discussed. | uk_UA |
| dc.description.sponsorship | This work was partially supported by the European Union within the European Regional Development Fund, through the Innovative Economy grant ( POIG.01.01.02 - 00 -108/09 ). | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
