Using ion beams for creation of nanostructures on the surface of high-stable materials

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10
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Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 1
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dc.contributor.author	Gorbov, I.V.
dc.contributor.author	Petrov, V.V.
dc.contributor.author	Kryuchyn, A.A.
dc.date.accessioned	2017-05-26T05:44:31Z
dc.date.available	2017-05-26T05:44:31Z
dc.date.issued	2007
dc.identifier.citation	Using ion beams for creation of nanostructures on the surface of high-stable materials / I.V. Gorbov, V.V. Petrov, A.A. Kryuchyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 27-29. — Бібліогр.: 5 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 81.07.-b
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117660
dc.description.abstract	Main ion-beam etching techniques for creation of nanostructures on the surface of high-stable materials have been considered. Methods of information recording in the form of nanostructure on the metallic substrate surface have been analyzed. Application of glass substrate for creation long-term data carrier was proposed. Microrelief information record on the glass substrate surface was obtained using the ionbeam etching.	uk_UA
dc.description.sponsorship	The authors thank the staff of V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine for their assistance in nanostructure measurements.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Using ion beams for creation of nanostructures on the surface of high-stable materials	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA