Avramenko, S.F.; Kiselev, V.S.; Valakh, M.Ya.; Visotski, V.G.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
Monocrystalline SiC ingots were grown by a modified Lely method using 6H-SiC seed crystals with (0001) base plane. The crystal growth was carried out in the temperature range 2200-2500 ⁰C at Ar pressure from 2 to 40 mbar. ...