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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Physical mechanism of temperature oscillations in ferroelectric ceramics conduction 
    Lepikh, Ya.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    For ferroelectric ceramics of the lead zirconate-titanate PZT-5 system the results of investigations of conduction temperature oscillations are presented. An explanation for the effect of conduction temperature oscillations ...
  • Polarization operator of phonons in quadratic approximation 
    Grigorchuk, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Using the method of the retarded Green function the polarization operator of phonons has been calculated with the simultaneous account for the linear and quadratic terms in the Hamilton operator of exciton-phonon interaction. ...
  • Properties and application of the unequal thickness two-component interference systems 
    Fekeshgazi, I.V.; Pervak, V.Yu.; Pervak, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The methods of synthesis and designing of the two-component unequal thickness multilayer interference systems as well as interconnection of their indices of layers are presented. A solution of the problem of suppressing ...
  • Simple waveguide model of arbitrary filled plane-plane cavity 
    Anokhov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Some waveguide features responsible for angular structure of a plane-plane cavity output emission, which were not discussed before, are considered. A number of common regularities in mode structure of such cavity at the ...
  • Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing 
    Agueev, O.A.; Svetlichny, A.M.; Soloviev, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    For 3C-, 6H- and 4H-SiC polytypes of different conduction types and with various impurity concentrations we investigated absorption of incoherent radiation from the near IR spectral region at rapid thermal annealing. General ...
  • Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy 
    Kladko, V.P.; Datsenko, L.I.; Maksimenko, Z.V.; Lytvyn, O.S.; Prokopenko, I.V.; Zytkiewicz, Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for ...
  • Thermoelastic stresses and defect production in semiconductor-insulator structures at isothermic heating 
    Agueev, O.A.; Svetlichnyi, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    For semiconductor structure substrates with film coating disturbances we investigated thermoelastic stresses and their effect on defect production at isothermic heating. A developed mathematical model enables one to optimize ...
  • Thermoelectric properties of solid solutions based on tin telluride 
    Freik, D.M.; Galushchak, M.O.; Ivanishin, I.M.; Shperun, V.M.; Zapukhlyak, R.I.; Pyts, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The relation of a thermoelectric parameters of the solid solutions based on tin telluride: SnTe-MnTe, SnTe-Cu₂Te and SnTe-In₂Te₃: Pb versus an amount of dopant impurity are investigated. The crystaloquasichemical mechanism ...

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