Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3
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Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3
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Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing

Agueev, O.A. ; Svetlichny, A.M. ; Soloviev, S.I.

Інший ID: PACS: 42.25.B, 77.84.B, 78.20.C

URI: http://dspace.nbuv.gov.ua/handle/123456789/121170

Посилання: Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing / O.A. Agueev, A.M. Svetlichny, S.I. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 379-382. — Бібліогр.: 15 назв. — англ.

Підтримка: We are grateful to Prof. U. Lindefelt and Dr. C. Persson who kindly sent us the preprints of their papers.

Дата: 2000

Завантажень: 435

Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing

Анотація:

For 3C-, 6H- and 4H-SiC polytypes of different conduction types and with various impurity concentrations we investigated absorption of incoherent radiation from the near IR spectral region at rapid thermal annealing. General regularities of both radiation absorption and sample heating are considered. We evaluated various processing modes; one should take this into account when developing technological procedures based on rapid thermal processing for SiC.

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