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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Lashkarev, G.V.; Radchenko, M.V.; Slynko, E.I.; Vodopiyanov, V.N.; Asotsky, V.V.; Kaminsky, V.M.; Beketov, G.V.; Rengevich, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The researches results of films (PbTe)₁₋y(GaTe)y and (Pb₁₋xGexTe)₁₋y(GaTe)y of n-type conductivity with carrier concentration within (2⋅10¹⁷÷9⋅10¹⁸) cm⁻³ are represented. The films were growth by modified hot wall technology ...
  • Venger, Ye.F.; Kolomoets, V.V.; Machulin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The manifestation of the low temperature plasticity (LTP) in highly uniaxially strained Ge and Si single crystals was deduced from analysis of the both tensoeffect measurements data and defect-selective etching patterns ...
  • Dubovik, M.F.; Tolmachev, A.V.; Grinyov, B.V.; Grin, L.A.; Dolzhenkova, E.F.; Dobrotvorskaya, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Thermostimulated luminescence (TSL) of Li₂B₄O₇ and Li₂B₄O₇:Eu single crystals in the temperature range 290-650K has been studied. Lithium tetraborate (LTB) doped with europium has been found to favour a further increase ...
  • Bonchik, A.Yu.; Dacko, B.J.; Demchuk, V.I.; Kiyak, S.G.; Palyvoda, I.P.; Shnyr, A.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Laser modifications of semiconductors are often realized by pulsed rapid melting and subsequent resolidification. Recently melt instabilities have been discovered in locally melted semiconductor surfaces. We determined ...
  • Boltovets, N.S.; Basanets, V.V.; Ivanov, V.N.; Krivutsa, V.A.; Tsvir, A.V.; Belyaev, A.E.; Konakova, R.V.; Lyapin, V.G.; Milenin, V.V.; Soloviev, E.A.; Venger, E.F.; Voitsikhovskyi, D.I.; Kholevchuk, V.V.; Mitin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route ...
  • Shwarts, Yu.M.; Kondrachuk, A.V.; Shwarts, M.M.; Shpinar, L.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We investigated I-V curves and thermometric characteristics of heavily doped p-silicon structures at liquid helium temperatures. The variable-range hopping conductivity is shown to occur in the structures studied. The ...
  • Kovalenko, S.A.; Fedorovych, R.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Results of studing optical constants of thin gold films are given. The values of refraction and extinction coefficients (n, æ, respectively) are calculated from reflection and transmission spectra accordingly to traditional ...
  • Tetyorkin, V.; Movchan, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The static dielectric constant was investigated as a function of temperature and carrier concentration in In(Cu)/p-PbTe Schottky contacts. Single crystals of PbTe doped with Ga were used as substrates for preparation of ...
  • Bazhenov, M.Yu.; Golod, P.I.; Grabovskyy, V.V.; Kurdyukov, V.V.; Tolmachev, A.I.; Ilchenko, A.Ya.; Sokolov, N.I.; Zahaykevich, G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Phase hologram recording is based on photoconductivity which appears in polymer molecular semiconductor film being exposed to light [1]. Photocurrent threshold depends on energy gap between valence and conduction bands of ...
  • Stronski, A.; Vlcek, M.; Sklenar, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The present paper is concerned with investigations of photoinduced structural changes in As100-xSx layers. Optical constants of variously treated (virgin, exposed, annealed) samples were determined from optical transmission ...
  • Ilchuk, G.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The method of mass-transfer reaction with compounds NH₄ (Cl, Br, J) as a transроrting agent is developed, and single crystals of semiinsulating CdTe are grown. Interaction of plane-polarized radiation with In-p-CdTe barrier ...
  • Lepikh, Ya.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    For ferroelectric ceramics of the lead zirconate-titanate PZT-5 system the results of investigations of conduction temperature oscillations are presented. An explanation for the effect of conduction temperature oscillations ...
  • Grigorchuk, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Using the method of the retarded Green function the polarization operator of phonons has been calculated with the simultaneous account for the linear and quadratic terms in the Hamilton operator of exciton-phonon interaction. ...
  • Fekeshgazi, I.V.; Pervak, V.Yu.; Pervak, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The methods of synthesis and designing of the two-component unequal thickness multilayer interference systems as well as interconnection of their indices of layers are presented. A solution of the problem of suppressing ...
  • Anokhov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Some waveguide features responsible for angular structure of a plane-plane cavity output emission, which were not discussed before, are considered. A number of common regularities in mode structure of such cavity at the ...
  • Agueev, O.A.; Svetlichny, A.M.; Soloviev, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    For 3C-, 6H- and 4H-SiC polytypes of different conduction types and with various impurity concentrations we investigated absorption of incoherent radiation from the near IR spectral region at rapid thermal annealing. General ...
  • Kladko, V.P.; Datsenko, L.I.; Maksimenko, Z.V.; Lytvyn, O.S.; Prokopenko, I.V.; Zytkiewicz, Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for ...
  • Agueev, O.A.; Svetlichnyi, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    For semiconductor structure substrates with film coating disturbances we investigated thermoelastic stresses and their effect on defect production at isothermic heating. A developed mathematical model enables one to optimize ...
  • Freik, D.M.; Galushchak, M.O.; Ivanishin, I.M.; Shperun, V.M.; Zapukhlyak, R.I.; Pyts, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The relation of a thermoelectric parameters of the solid solutions based on tin telluride: SnTe-MnTe, SnTe-Cu₂Te and SnTe-In₂Te₃: Pb versus an amount of dopant impurity are investigated. The crystaloquasichemical mechanism ...

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