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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Influence of neutron irradiation on elctrooptical and structural properties of silicon 
    Groza, A.A.; Venger, E.F.; Varnina, V.I.; Holiney, R.Yu.; Litovchenko, P.G.; Matveeva, L.A.; Litovchenko, A.P.; Sugakov, V.I.; Shmatko, G.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Processes of structure defects formation, which accompanied by oxygen precipitation after a neutron irradiation (10¹⁵- 10¹⁹ n/cm²) and high-temperature treatment (800 - 1000°С) in CZ silicon, were investigated by the ...
  • Influence of structural defects on photoconductivity of zinc diphosphide 
    Kudin, A.P.; Kuts, V.I.; Litovchenko, P.G.; Pinkovska, M.B.; Tartachnyk, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Spectral distribution of photoconductivity of initial and gamma-irradiated p-type zinc diphosphide crystals of tetragonal modification has been studied. It is supposed that band hn = 1.65 eV responses to clusters of defects ...
  • Low-temperature growth of diamond films using supersonic DC arcjet 
    Romanyuk, A.; Gottler, H.; Popov, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Diamond film growth on silicon at substrate temperature between 180 to 360 oC has been studied. The influence of hydrocarbon source on growth conditions and on diamond quality has been also investigated. Several series of ...
  • Optical investigations of thermostimulated changes in an ensemble of CdSxSe₁₋x quantum dots embedded into borosilicate glass matrix 
    Kunets, V.P.; Yukhymchuk, V.O.; Valakh, M.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We have employed the absorption and Raman spectroscopies to study thermostimulated changes in an ensemble of CdSXSe₁₋X quantum dots embedded into a borosilicate glass matrix. It is shown that additional annealing of the ...
  • Raman scattering of light in biaxial monocline β-ZnP₂ crystals 
    Gubanov, O.V.; Kulakovs’kij, V.D.; Poveda, R.A.; Yanchuk, Z.Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In this paper we represent for the first time observed experimental data on non-resonant Raman scattering in a plate of β-ZnP₂. The high-frequency part of RS spectra КР β-ZnP₂ is determined by oscillations of sites in ...
  • Refractory contact to a-SiC produced by laser technology methods 
    Fedorenko, L.L.; Kiseleov, V.S.; Svechnikov, S.V.; Yusupov, M.M.; Beketov, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Developed in the paper are method and technological scheme to obtain ohmic contacts (OC) to a-SiC(:N), Nd - Na ~1 - 3.10¹⁸ cm⁻³ by pulse laser deposition (PLD) of multilayer structures Ni/W/Si₃N₄/W and the following laser ...
  • Silver-related local centres in cadmium sulfide 
    Borkovskaya, L.V.; Bulakh, B.M.; Khomenkova, L.Yu.; Markevich, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Silver-related defects and their diffusion in CdS crystals were investigated. The impurity was introduced in the crystal and extracted from it under electric field Ed = 10² V/cm at T = 300-450°C both parallel and perpendicular ...
  • Singular peculiarities of a plane wave diffracted on half-plane 
    Anokhov, S.; Khizhnyak, A.; Lymarenko, R.; Soskin, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We analyzed singular properties of edge dislocation waves («EDW») - the main information component of the field formed at plane wave diffraction on half-plane. It is shown that analytical structure of this wave is completely ...
  • Spectral dependence of the photomagnetic effect in porous silicon 
    Vakulenko, O.V.; Kondratenko, S.V.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Measurements of the photomagnetic effect spectra of PS/c-Si were carried out. Obtained results were explained by influence of the spatial charge region of the heterojunction between wide-band porous silicon and c-Si substrate ...
  • Stimulated by heating-up changes of lux-brightness characteristics of semi-in sulating speciallyundoped GaAs crystals 
    Litovchenko, N.M.; Prokhorovich, A.V.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    It was shown that thermal treatment of semi-insulating specially undoped gallium arsenide leads to significant changes of lux-brightness characteristics of inter- impurity and impurity bands in the spectra of impurity ...
  • Study of photorefractive effect in crystals Pb₅Ge₃O₁₁:Cu and Pb₅Ge₃O₁₁ 
    Gnatovsky, O.; Linnik, V.; Pryadko, L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    For the first time photorefractive properties of Pb₅Ge₃O₁₁:Cu were studied and compared with those of Pb₅Ge₃O₁₁crystals. Diffraction efficiency of holographic grating registered on Pb₅Ge₃O₁₁:Cu and Pb₅Ge₃O₁₁crystals was ...
  • Surface enhanced infrared absorption of nucleic acids on gold substrate 
    Dovbeshko, G.I.; Chegel, V.I.; Gridina, N.Y.; Repnytska, O.P.; Shirshov, Y.M.; Tryndiak, V.P.; Todor, I.M.; Zynio, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Data on surface enhanced infrared absorption (SEIRA) of nucleic acids deposited on the metal surface have been obtained in the experiment in FTIR reflectance mode. As metal surface, we used Au of 200-500 Е thickness on ...

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