Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 4 за автором "Konakova, R.V."

Результати 1-3 з 3

A universal automated complex for control and diagnostics of semiconductor devices and structures

Konakova, R.V.; Rengevych, O.E.; Kurakin, A.M.; Kudryk, Ya.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in ...
Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures

Bacherikov, Yu.Yu.; Konakova, R.V.; Kolyadina, E.Yu.; Kocherov, A.N.; Okhrimenko, O.B.; Svetlichnyi, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

We investigated the effect of microwave radiation on absorption spectra (in 400-800 nm range) and curvature radius of SiO₂/SiC structures obtained using traditional thermal oxidation in water vapor at the temperature of ...
Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing

Litvinov, V.L.; Demakov, K.D.; Agueev, O.A.; Svetlichny, A.M.; Konakova, R.V.; Lytvyn, P.M.; Lytvyn, O.S.; Milenin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Using X-ray phase analysis, Auger electron spectroscopy and atomic force microscopy, we investigated structural-phase transformations in the Ni/n-21R-SiC system induced by rapid thermal annealing in a vacuum (pressure of ...

Результати 1-3 з 3

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