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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Many-body theory of all-optical quantum well logic gates 
    Pereira Jr., M.F.; Prado, M.; Sampaio, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    A many-body theory, based on the solutions of generalized semiconductor Maxwell-Bloch equations for coupled-band multiple quantum wells is applied to the description of the optical non linearities responsible for the ...
  • Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals 
    Tagiyev, B.G.; Madatov, R.S.; Aydayev, F.Sh.; Abbasova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The paper deals with electroluminescence investigations in GaSe:Er monocrystals. It is ascertained that Er³⁺ centers in GaSe are excited by two ways: a) as a result of non-radiating recombination of the injected charge ...
  • Modelling optical spectra and obtaining information on parameters and features of semiconductor structures 
    Vasiljev, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Problems of semiconductor optical spectrum identification are considered in the paper. Some models for description of optical reflection spectra in semiconductors and semiconductor structures are presented. Shown is the ...
  • Optical size effects in thin gold films 
    Kovalenko, S.A.; Lisitsa, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The optical size effects that appear in thickness dependencies of refraction (n) and absorption (k) indexes, Brewster's quasiangle and dielectric constant e2 in thin gold films are discussed. All of them have oscillating ...
  • Photo-enchanced defect reactions in CdS:Ag crystals 
    Khomenkova, L.Yu.; Markevich, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Two reversible photo-enhanced defect reactions proceeding under visible light illumination have been found in CdS:Ag crystals. The first process leads to the increase of crystal photosensitivity, which has been shown to ...
  • Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements 
    Stronski, A.V.; Vlcek, M.; Kostyukevych, S.A.; Tomchuk, V.M.; Kostyukevych, E.V.; Svechnikov, S.V.; Kudryavtsev, A.A.; Moskalenko, N.L.; Koptyukh, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Thin vacuum-evaporated layers of As₄₀S₆₀-xSex composition are investigated using Raman spectroscopy from the viewpoint of thermo- and photostructural transformations in them. These transformations are considered as changes ...
  • The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films 
    Deibuk, V.G.; Korolyuk, Yu.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Structural and thermodynamic properties of IV-IV solid solutions were calculated by molecular dynamics simulation. Biaxial strains are extremely important for the miscibility behavior of alloy films. It was shown the ...
  • Total energy, equation of states and bulk modulus of Si and Ge 
    Jivani, A.R.; Gajjar, P.N.; Jani, A.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    A model potential describing electron-ion interaction is presented for intrinsic semiconductors Si and Ge. The present model potential is single parametric, continuous in r-space and weaker within core and Coulombic outside ...

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