Dotsenko, Yu.P.; Ermakov, V.M.; Gorin, A.E.; Khivrych, V.I.; Kolomoets, V.V.; Machulin, V.F.; Panasjuk, L.I.; Prokopenko, I.V.; Sus', B.B.; Venger, E.F.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects ...