Evtukh, А.А.; Indutnyy, I.Z.; Lisovskyy, I.P.; Litvin, Yu.M.; Litovchenko, V.G.; Lytvyn, P.M.; Mazunov, D.O.; Rassamakin, Yu.V.; Shepeliavyi, P.E.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
Efficient electron field emission from silicon flat cathode coated with SiOx film (x 0.3-0.5) was observed both before and after thermal (1000 °C) annealing with subsequent etching in HF solution. Oxide films were produced ...