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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7 за назвою

Сортувати за: Порядок: Результатів:

  • Diluted magnetic А₁₋xMnxВ semiconductors 
    Bryksa, V.P.; Tarasov, G.G.; Masselink, W.T.; Nolting, W.; Mazur, Yu.I.; Salamo, G.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Novel model of the diluted magnetic semiconductors (DMS) А₁₋xMnxВ possessing the metallic conductivity is proposed. Using the coherent potential technique the electron scattering by the randomly distributed Mn centers ...
  • Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters 
    Avdeev, S.P.; Agueev, O.A.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, O.S.; Lytvyn, P.M.; Milenin, V.V.; Sechenov, D.A.; Svetlichny, A.M.; Soloviev, S.I.; Sudarshan, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We present experimental investigations of the effect of rapid thermal treatment with incoherent IR radiation, as well as electric-spark and electron-beam treatments, on the electric parameters of Ni(Ti) n-21R(6H)-SiC ...
  • Effects of LO-phonon confinement on electron mobility in GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice 
    Abouelaoualim, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The parallel and perpendicular electron mobilities in a GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice have been calculated. The scattering of electrons by confined longitudinal optical phonons was taken into account. Using the quantum ...
  • Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact 
    Kovalyuk, Z.D.; Sydor, O.M.; Netyaga, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Photosensitive heterojunctions were created by the method of optical contact of layered semiconductor InSe to CuInSe₂ plates. Due to high quality of contacting surfaces, a strong and enough perfect electrical junction is ...
  • Electrodynamic linear response of a superconductor film located at the surface of semiconductor 
    Lozovski, V.; Reznik, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The susceptibility of thin superconductor film was obtained. The absorption of energy of external electromagnetic field by superconductor film located at a semiconductor substrate was calculated. A new approach to calculation ...
  • Ellipsometric control of quality of polished MgF₂ optical ceramics 
    Maslov, V.P.; Sarsembaeva, A.Z.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this work, ellipsometric measurements were used to optimise the technology of machine working the polished parts made of MgF₂ optical ceramics. The ellipsometry is a high-performance contactless method to control quality ...
  • Ellipsometry examination of copper alloys with transitive metals 
    Filipov, Y.V.; Staschuk, V.S.; Poperenko, L.V.; Vovchenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Electron structure of copper alloys with 3d transition metals (Fe, Co and Cr) have been studied basing on elliposometrical measurement of D and Y in wide spectral range hn = 1.0–4.95 eV. Spectral dependences of Cu-Cr alloys ...
  • Erratum: to the paper “Influence of elastic deformation on the residual ellipticity of polished optical materials” 
    Maslov, V.P.; Sarsembaeva, A.Z.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The elastic deformation of thin mirrors is widely used in systems of adaptive optics, however, of influence of elastic deformations on parameters of reflected polarised light in the literature. Using the method of ...
  • Exciton effects in band-edge electroluminescence of silicon barrier structures 
    Sachenko, A.V.; Gorban, A.P.; Korbutyak, D.V.; Kostylyov, V.P.; Kryuchenko, Yu.V.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    A theoretical analysis of the band-edge electroluminescence efficiency in silicon diodes and p-i-n-structures has been made. We have shown that maximal possible efficiency can achieve 10 % both at room and liquid nitrogen ...
  • Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell 
    Hashim, U.; Ayub, R.M.; On, K.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The EEPROM process is one the hardest process to be developed. The performance of the EEPROM devices is normally judged on the programming speed, which relates to program high (erase) and program low (write) operations. ...
  • Features of growing epitaxial layers from solid solutions based on indium and aluminium arsenides 
    Yodgorova, D.M.; Karimov, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Growing the epitaxial layers that contain the aluminium or indium has its specific features. So, the epitaxial layers prepared using the method of liquid-phase epitaxy at high (0.1 to 0.2 at. %) contents of a replacing ...
  • Ferromagnetism induced in diluted A₁₋xMnxB semiconductors 
    Bryksa, V.P.; Tarasov, G.G.; Masselink, W.T.; Nolting, W.; Mazur, Yu.I.; Salamo, G.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Theoretical model has been developed for analysis of the peculiarities of new type of magnetism in diluted magnetic A₁₋xMnxB semiconductors. The coherent potential is introduced using the dynamic mean field theory (DMFT) ...
  • Galvanomagnetic phenomena in HgMnTe and HgCdMnTe single crystals 
    Ostapov, S.E.; Rarenko, I.M.; Tymochko, M.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    This paper presents theoretical and experimental investigations of narrow-gap semiconductors HgMnTe and HgCdMnTe. It has been shown that the comparison of temperature dependencies of the conductivity and Hall coefficient ...
  • Gold and colloidal gold surface influence on dna conformational change 
    Dovbeshko, G.I.; Gnatyuk, O.P.; Chegel, V.I.; Shirshov, Y.M.; Kosenkov, D.V.; Andreev, E.A.; Tajmir-Riahi, H.A.; Lytvyn, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    DNA conformational changes caused by gold and colloidal gold surface have been studied by surface enhanced infrared spectroscopy (SEIRA), spectroscopy of plasmon resonance (SPR), atomic force microscopy (AFM) and principal ...
  • Growth and linear optical properties of CuCl nanocrystals 
    Mahtout, S.; Belkhir, M.A.; Samah, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Linear optical properties of CuCl nanocrystals in a NaCl matrix have been studied using optical absorption, cathodoluminescence and X-ray diffraction measurements. Our measurements showed that CuCl nanocrystals were really ...
  • Individual glow bands of Mn²⁺ ions photoluminescence in plastically deformed ZnS single crystals 
    Prokofiev, T.A.; Kovalenko, A.V.; Polezaev, B.A.; Bulanyi, M.F.; Gorban, A.A.; Hmelenko, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The spectra of a photoluminescence (PL) in plastically deformed (PD) ZnS:Mn single crystals are investigated. It is shown that the PD processes cause change of a quantitative ratio between separate types of glow manganese ...
  • Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons 
    Dolgolenko, A.P.; Litovchenko, P.G.; Litovchenko, A.P.; Varentsov, M.D.; Lastovetsky, V.F.; Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Silicon n-type samples with resistivity ~2.5*10³ Ohm*cm grown by the method of a floating-zone in vacuum (FZ), in argon tmosphere (Ar) and received by the method of transmutation doping (NTD) are investigated before and ...
  • Influence of high hydrostatic pressure on energetic structure and electron-lattice coupling of transition metal and rare earth related centers in solids 
    Grinberg, M.; Barzowska, J.; Gryk, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We present the results of the photoluminescence of the crystals doped with transition metals or rare earth ions obtained under high hydrostatic pressure up to 300 kbar applied in diamond anvil cells (DAC). We have focused ...
  • Investigation of nanophase separation in IR optical glasses As₄₀Se₆₀ using resonant Raman scattering 
    Mateleshko, N.; Mitsa, V.; Veres, M.; Koos, M.; Stronski, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Resonant Raman spectra of stoichiometric glass (g) g-As₄₀Se₆₀ have been investigated. It was observed that the increasing of excitation radiation energy hv>E₀ (E₀ is pseudogap width) changes a shape, intensity, and position ...
  • Investigation of β-CdP₂ crystals by laser spectroscopy methods 
    Patskun, I.I.; Slipukhina, I.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    β-CdP₂ CdP₂ single crystal of tetragonal modification is investigated by methods of lasermodulated spectroscopy at 293 K. The spectra of coherent two-photon absorption (TPA) have been measured and their theoretical ...

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