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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8 за автором "Konakova, R.V."

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8 за автором "Konakova, R.V."

Сортувати за: Порядок: Результатів:

  • Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features 
    Dmitruk, N.L.; Karimov, A.V.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Over a wide temperature range (77…400 K), we studied I-V curves of photoelectric converter (solar cell) prototypes made on the basis of p-AlxGa₁-xAs– p-GaAs–n-GaAs–n⁺-GaAs heteroepitaxial structures grown on smooth or ...
  • New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis 
    Arsentyev, I.N.; Bobyl, A.V.; Tarasov, I.S.; Shishkov, M.V.; Boltovets, N.S.; Ivanov, V.N.; Kamalov, A.B.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, O.S.; Lytvyn, P.M.; Markovskiy, E.P.; Milenin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n⁺-InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiBx interstitial phases, is proposed. ...
  • Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis 
    Belyaev, A.E.; Bobyl, A.V.; Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Konnikov, S.G.; Kudryk, Ya.Ya.; Markovskiy, E.P.; Milenin, V.V.; Rudenko, E.M.; Tereschenko, G.F.; Ulin, V.P.; Ustinov, V.M.; Tsirlin, G.E.; Shpak, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The n⁺-n-n⁺-n⁺⁺-GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n⁺⁺-GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the ...
  • Porous nanostructured InP: technology, properties, application 
    Arsentyev, I. N.; Bobyl, A.B.; Konnikov, S.G.; Tarasov, I.S.; Ulin, V.P; Shishkov, M.V.; Boltovets, N.S.; Ivanov, V.N.; Belyaev, A.E.; Konakova, R.V.; Kudryk, Ya.Ya.; Kamalov, A.B.; Lytvyn, P.M.; Markovskiy, E.P.; Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP ...
  • Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x 
    Sapaev, B.; Saidov, A.S.; Bacherikov, Yu.Yu.; Konakova, R.V.; Okhrimenko, O.B.; Dmitruk, I.N.; Galak, N.P.; Sapaev, I.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Presented are the investigation of (Si₂)₁₋x(ZnS)x solid solutions. Morphological, electrical, and optical properties of the solutions are investigated. Chemical components of the solid solutions are homogeneously distributed ...

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