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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8 за назвою

Сортувати за: Порядок: Результатів:

  • Technology of manufacturing the reliable silicon photoconverters with long operation time 
    Guseynov, N.A.; Askerov, Sh.Q.; Aslanov, Sh.S.; Agaev, M.N.; Gasanov, M.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We offer to use an amorphous metal alloy Al₈₀Ni₂₀ as ohmic contact and current-collecting tracks to silicon photoconverters (PC) based on p-n junctions. Technological processes for production of silicon photosensitive ...
  • The nature of red emission in porous silicon 
    Khomenkova, L.Yu.; Korsunska, N.E.; Bulakh, B.M.; Sheinkman, M.K.; Stara, T.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The photoluminescence spectra of porous silicon at 77 and 300 K and their transformation during aging were investigated. The competition of two radiative recombination channels that have a common excitation mechanism was ...
  • Theory of two-dimensional photonic crystals with lamellar cylindrical pores 
    Glushko, A.E.; Glushko, E.Ya.; Karachevtseva, L.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Theoretical investigation of 2D photonic crystals containing intermediate layers on the surface of cylindrical pores is performed within the framework of the plane-wave model. We have analyzed how the third medium introduction ...
  • The role of optical phonons in electrons heating by IR radiation in Ge 
    Poroshin, V.N.; Sarbey, O.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    An expression for the coefficient of light absorption by “hot” electrons in many-valley semiconductors for carrier scattering by nonpolar optical phonons in dependence on the carrier temperature and electron concentration ...
  • The structure of glassy HgS–GeS₂ 
    Halyan, V.V.; Davydyuk, H.Ye.; Parasyuk, O.V.; Kevshyn, A.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The glass HgS(x)-GeS2(₁₀₀-x) (0 ≤ x ≤ 50) was subjected to X-ray analysis. The radial distribution functions were calculated using the integral Fourier transformation based on X-ray scattering curves. The average interatomic ...
  • Unstable mixing regions in II-VI quaternary solid solutions 
    Deibuk, V.G.; Dremlyuzhenko, S.G.; Ostapov, S.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The miscibility gaps and critical temperatures of the spinodal decompositions of the quaternary semiconducting epitaxial thin films CdMnHgTe and ZnMnHgTe have been calculated. Fitting the spinodal isotherms calculated from ...
  • Zn and Mn impurity effect on electron and luminescent properties of porous silicon 
    Primachenko, V.E; Kirillova, S.I.; Manoilov, E.G.; Kizyak, I.M.; Bulakh, B.M.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Investigated in this work are por-Si/n-Si structures prepared by anodizing silicon in 1 % HF water solution, which was followed by natural aging in air and doping with Zn and Mn impurities. When aging, the oxide film of ...

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