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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8 за назвою

Сортувати за: Порядок: Результатів:

  • Characteristics of optical limiting in media with nonlinear absorption and scattering 
    Zelensky, S.E.; Kolesnik, O.S.; Kopyshinsky, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A comparative study is performed for characteristics of optical limiting in the media with nonlinear absorption and scattering with the use of nanosecond-scale laser pulses. Two methods are proposed to analyze of experimental ...
  • Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon 
    Gutsulyak, B.I.; Oliynych-Lysyuk, A.V.; Fodchuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Low-frequency internal friction and dynamic shear modulus (Geff) in Si monocrystal were investigated in the range of 20 to 200 ºC. Temperature hysteresis of internal friction was found and effective shear modulus was studied ...
  • Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field 
    Kazantseva, Z.; Kislyuk, V.; Kozyarevych, I.; Lozovski, V.; Tretyak, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The conductance relaxation of Langmuir-Blodgett films of manganese phthalocyanine in inhomogeneous electrical field was studied. Inhomogeneous electrical field was achieved by using the lateral surface of reverse-biased ...
  • Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure 
    Wierzchowski, W.; Misiuk, A.; Wieteska, K.; Bak-Misiuk, J.; Jung, W.; Shalimov, A.; Graeff, W.; Prujszczyk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Effect of stress created by Ar hydrostatic pressure (HP) up to 1.1 GPa during annealing at the high temperature (HT) 1070 K (HT-HP treatment) on microstructure of Czochralski grown silicon co-implanted with helium and ...
  • Dielectric relaxation in Se₈₀Ge₂₀ and Se₇₅Ge₂₀Ag₅ chalcogenide glasses 
    Dwivedi, A.; Arora, R.; Mehta, N.; Choudhary, N.; Kumar, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Temperature and frequency dependence of dielectric constant (ε') and dielectric loss (ε") are studied in glassy Se₈₀Ge₂₀ and Se₇₅Ge₂₀Ag₅. The measurements have been made in the frequency range (1 to 10 kHz) and in the ...
  • Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe 
    Izhnin, I.I.; Bogoboyashchyy, V.V.; Kurbanov, K.R.; Mynbaev, K.D.; Ryabikov, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The dependence of the conversion depth in CdxHg₁–xTe alloys subjected to ion-beam milling (CMT) on alloy composition and treatment temperature is studied both experimentally and theoretically. It is shown that in compositionally ...
  • Effect of non-linear absorption on characteristics of laser-induced luminescence 
    Zelensky, S.E.; Okhrimenko, B.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    This paper deals with the methodology of laser-induced luminescence at high excitation levels. For a case when a photodetector collects integral (over the volume) luminescence power, a method is proposed for processing the ...
  • Electron properties of semiconductor surface studied by the electroreflectance spectroscopy method 
    Gentsar, P.A.; Vlasenko, A.I.; Kudryavtsev, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Relations between the Keldysh-Franz oscillations with electron parameters of semiconductor materials were used to derive qualitative data for homoepitaxial films n-GaAs (100) from their electroreflectance spectra. The ...
  • Electron states at the Si–SiO₂ boundary (Review) 
    Primachenko, V.E.; Kirillova, S.I.; Venger, E.F.; Chernobai, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    This review is aimed at analysis of the system of discrete and continuously distributed boundary electron states (BES) on (111) and (100) silicon surfaces in the Si-SiO₂ structures prepared mainly using thermal oxidation ...
  • Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces 
    Dmitruk, N.L.; Borkovskaya, O.Yu.; Kostylyov, V.E.; Sachenko, A.V.; Sokolovskiy, I.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We studied experimentally the photoelectric characteristics of the AlxGa₁₋xAs–p-GaAs–n-GaAs structures with relief interfaces. A theoretical analysis of spectral dependences of internal quantum efficiency of short-circuit ...
  • Filter for TV and video cameras 
    Berezhinsky, L.I.; Dae-Yong Park; Chang-Min Sung; Kwang-Ho Kwon; Sang-Hoon Chai (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    An infrared-cut filter for TV and video cameras was calculated and fabricated. The filter contains 28 alternating SiO₂ and TiO₂ layers. The filter was calculated using the principle of unequal-thickness layers. This filter ...
  • Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase 
    Feychuk, P.; Kopyl, O.; Pavlovich, I.; Shcherbak, L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A modified vapor phase growth method to obtain high-resistive Cd1-xZnxTe single crystals (0 < x < 0.13) is presented. The single crystals (about 25 cm⁻³ in size) with natural faceting were grown by vapor transport in ...
  • Influence of low-temperature annealing on the state of CdTe surface 
    Parfenyuk, O.A.; Ilashchuk, M.I.; Chupyra, S.M.; Burachek, V.R.; Korbutyak, D.V.; Krylyuk, S.G.; Vakhnyak, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Influence of low-temperature annealing on electrical and luminescent properties of semi-insulating n-CdTe:Sn is studied. It is shown that annealing at T ≥ 453 K modifies a near-surface layer of the crystals and this enhances ...
  • Influence of polarization azimuth on twophoton absorption in CdS 
    Kulish, N.R.; Lisitsa, M.P.; Malysh, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    To study the dependence of the two-photon absorption coefficient β on a polarization azimuth ϕ we used the method of one light source at the ruby laser frequency. It was shown that β changes smoothly with increasing ϕ ...
  • Interband optical transitions in spherical nanoheterostructures 
    Boichuk, V.I.; Bilynskyi, I.V.; Shakleina, I.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A spherical semiconductor nanoheterostructure of cubic symmetry is studied in the paper. Accurate solutions of the Schrödinger equation for S₁/₂, P₁/₂, P₃/₂, D₅ /₂, and D₇/₂ states of particles are found in the framework ...
  • Inversion asymmetry effect on quantum oscillations in 3-D crystals with Cnv symmetry 
    Ivchenko, V.V.; Sergeev, A.N.; Elnik, V.S.; Chuiko, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The peculiarities of quantum oscillations in bulk semiconductors with Cnv symmetry caused by the lack of their symmetry centre are considered. A quasi-qubic model is used for finding the magnetic levels. The algorithm for ...
  • Investigation of Al-ZERODUR interface by Raman and secondary ion mass spectroscopy 
    Berezhinsky, L.I.; Yukhymchuk, V.A.; Maslov, V.P.; Tetyorkin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The interface of ZERODUR ceramics and thin aluminium film was investigated by Raman and secondary ion mass-spectroscopy techniques. Possible chemical reactions at the interface is briefly analyzed and compared with ...
  • Investigation of cadmium telluride films on silicon substrate 
    Odarych, V.A.; Sarsembaeva, A.Z.; Sizov, F.F.; Vuichyk, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Properties of cadmium telluride films on silicon substrate, distribution of thickness and refraction index over the sample area were investigated by the ellipsometric method. It was ascertained that the refraction index ...
  • Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features 
    Dmitruk, N.L.; Karimov, A.V.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Over a wide temperature range (77…400 K), we studied I-V curves of photoelectric converter (solar cell) prototypes made on the basis of p-AlxGa₁-xAs– p-GaAs–n-GaAs–n⁺-GaAs heteroepitaxial structures grown on smooth or ...
  • Investigation of growing the Hg₁₋x₋y₋zAxByCzTe solid solutions by modified zone melting method 
    Gorbatyuk, I.N.; Zhikharevich, V.V.; Ostapov, S.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    This paper presents research of the process for growing the crystals of semiconductor solid solutions Hg₁₋x₋y₋zAxByCzTe under conditions of a modified zone melting.

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