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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2006, том 9 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2006, том 9 за назвою

Сортувати за: Порядок: Результатів:

  • Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs 
    Khemissi, S.; Merabtine, N.; Zaabat, M.; Kenzai, C.; Saidi, Y.; Amourache, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In the information sciences such as computer science, telecommunications, the treatment of signal or image transmission, the field effect components play an important role. In the frame of our work, we are interested in ...
  • Investigation of the effective mass of electrons in solid solutions Hg₁₋x₋y₋zAxByCzTe 
    Ostapov, S.E.; Zhikharevich, V.V.; Deibuk, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    This paper presents theoretical investigation on the influence of manganese and zinc in solid solutions of Hg₁₋x₋y₋zAxByCzTe on changes in the electron effective mass.
  • Investigation on the bandgap of semiconductor solid solution Hg₁₋x₋y₋zCdxMnyZnzTe 
    Zhikharevich, V.V.; Ostapov, S.E.; Deibuk, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The paper presents a investigation on the bandgap of a new narrow-gap semiconductor solid solution Hg₁₋x₋y₋zCdxMnyZnzTe via optical measurements. Modeling of the edge of fundamental absorption for Hg₁₋x₋y₋zCdxMnyZnzTe is ...
  • Kinoform syntesis as an improved method to form a concealed image in optical security devices 
    Braginets, E.V.; Girnyk, V.I.; Kostyukevych, S.A.; Kurashov, V.N.; Soroka, A.A.; Moskalenko, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    It is well known that one of the basic functions of security holograms is the maximal complication of their non-authorized reproduction, in other words – counterfeiting. To solve the problem, concealed images that can be ...
  • Landau parameter of elasticity 
    Merabtine, N.; Bousnane, Z.; Benslama, M.; Boussaad, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Based on the consideration given by the Ginzburg-Landau (GL) theory according to the variational principle, we assume that the microscopic Gibbs function density given by [1] ∫VGsdV = ∫(Fs - 1/4pBH)dv must be stationary ...
  • Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication 
    Savkina, R.K.; Sizov, F.F.; Smirnov, A.B.; Tetyorkin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Electrophysical parameters of Hg₁₋xCdxTe thin films grown by liquid-phase epitaxy and molecular-beam epitaxy were investigated before and after the high-frequency sonication ( fUS = 7.5 MHz, WUS ~ 10⁴ W/m²). It was determined ...
  • Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions 
    Brodovoy, А.V.; Veremenko, A.M.; Skryshevsky, V.A.; Vlasyuk, А.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The influence of constant magnetic field on thermostimutated current, photoconductivity, and magnetic susceptibility of ZnSe-GaAs solid solutions were studied. It was shown that exposition in constant magnetic field results ...
  • Mass-spectrometric investigations of gas evolution 
    Asnis, Yu.A.; Baranskii, P.I.; Babich, V.M.; Zabolotin, S.P.; Ptushinskii, Yu.G.; Sukretnyi, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Method of mass-spectrometry with time-of-flight recording of the desorbed products was used to study the gas evolution of impurities from the subsurface layer of Si crystals molten by the electron beam (of ~2 mm² area) in ...
  • Micropatterning in bistable cholesteric device with Bragg's reflection 
    Gritsenko, M.I.; Kucheev, S.I.; Lytvyn, P.M.; Tishenko, V.G.; Tkach, V.M.; Yelshansky, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In this work, the method to form bistable patterning in a cholesteric cell with Bragg’s reflection in the visible spectral range is demonstrated. In order to reach this, we used a Si/SiO₂ structure in which a potential ...
  • Microwave irradiation of gallium arsenide 
    Red'ko, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    To study an influence of the microwave irradiation on a spectrum of defect states in semiconductor compound GaAs, we used measurements of luminescence spectra within the range 0.5 to 2.04 eV at 77 К before and after long ...
  • Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy 
    Morozovska, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The thermodynamical theory of nanodomain tailoring in ferroelectrics-semiconductors allowing for semiconducting properties, screening and size effects is presented. The obtained analytical results prove that domains ...
  • Modelling of pyroelectric response in inhomogeneous ferroelectric-semiconductor films 
    Morozovska, A.N.; Eliseev, E.A.; Remiens, D.; Soyer, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We have modified the Landau-Khalatnikov approach and shown that the pyroelectric response of inhomogeneous ferroelectric-semiconductor films can be described using six coupled equations for six order parameters: average ...
  • Modelling vacancy microvoid formation in dislocation-free silicon single crystals 
    Talanin, V.I.; Talanin, I.E.; Koryagin, S.A.; Semikina, M.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    An alternative mathematical model of vacancy microvoid formation in dislocation-free silicon single crystals was represented. The analysis of conditions of microvoid nucleation inside the bulk of crystals during cooling ...
  • New fast-relaxed liquid crystal materials for optical communication networks 
    Garbovskiy, Yu.; Sadovenko, A.; Koval'chuk, A.; Klimusheva, G.; Bugaychuk, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Recording the dynamic holograms with microsecond relaxation times under action of laser pulses was obtained in composites based on the novel class of liquid crystals (LC), namely in ionic metal-alkanoates. Holographic ...
  • Noise induced re-entrant transitions in exciton bistable system 
    Gudyma, Yu.; Ivans'kii, B.; Semenko, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We study a re-entrant transition in an exciton bistable system under the influence of multiplicative noise. The re-entrant behavior is predictable for specific values of the system control parameter when increasing the ...
  • Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures 
    Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Mitin, V.F.; Mitin, E.V.; Lytvyn, O.S.; Kapitanchuk, L.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi-insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) ...
  • Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta 
    Madatov, R.S.; Tagiyev, B.G.; Najafov, A.I.; Tagiyev, T.B.; Gabulov, I.A.; Shakili, Sh.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The influence of γ-quanta irradiation on photoelectrical and optical properties of lamellar GaS single crystals at different temperatures has been investigated. It is determined that the irradiation of pure crystals at the ...
  • Photoabsorption and photoconductivity in C₆₀ layers 
    Kanev, St.; Nenova, Z.; Koprinarov, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    A complex investigation of the photoconductivity of fullerene films, prepared by thermal evaporation in vacuum, was carried out. The investigated films contain predominantly C₆₀ in various phases as shown elsewhere. The ...
  • Photoelectric properties of single crystals Ag₃In₅Se₉ 
    Huseynov, A.H.; Mamedov, R.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Low-resistance and high-resistance single crystals of Ag₃In₅Se₉ compound have been grown using the methods of zone recrystallization and slow cooling at a constant gradient of temperature. We have investigated spectral and ...
  • Photoemission spectra of indium selenide 
    Katerynchuk, V.M.; Kovalyuk, M.Z.; Tovarnitskii, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    For layered InSe crystals photoluminescence spectra were investigated and the corresponding radiative transitions were analyzed. It was found that along with the band-to-band transitions the radiative ones with participation ...

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