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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2006, том 9 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2006, том 9 за назвою

Сортувати за: Порядок: Результатів:

  • Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films 
    Indutnyy, I.Z.; Lysenko, V.S.; Min'ko, V.I.; Nazarov, A.N.; Tkachenko, A.S.; Shepeliavyi, P.E.; Dan'ko, V.A.; Maidanchuk, I.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Effect of hydrogen radiofrequency plasma and chemical treatment on photoluminescence (PL) spectra of SiOx layers containing Si nanoparticles are investigated. Considerable PL intensity growth in the samples containing Si ...
  • Effect of symmetry center losses on energy bands and carrier kinematics in Zn₃As₂ and Cd₃As₂ 
    Chuiko, G.; Don, N.; Martyniuk, V.; Stepanchikov, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The comparative analysis of the band structure and carrier kinematics for Zn₃As₂ and Cd₃As₂ has been executed. The influence of presence and absence of symmetry center in different crystalline phases of the above materials ...
  • Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals 
    Makara, V.A.; Steblenko, L.P.; Kolchenko, Yu.L.; Naumenko, S.M.; Lisovsky, I.P.; Mazunov, D.O.; Mokliak, Yu.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    IR spectroscopy study is indicative of the change in the relative concentration of interstitial oxygen in silicon monocrystals after their treatment by using the magnetic field. This is an evidence of a considerable effect ...
  • Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase 
    Shutov, S.V.; Baganov, Ye.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Influence of strains that appear in GaSb/InAs heterosystem on heteroepitaxial layer planarity is considered. It is shown that minimal supercooling of solution-melt at the saturation temperature of gallium antimonide in ...
  • Electric field and carrier concentration distributions in the semiconductor under photorefractive Gunn effect 
    Gorley, P.M.; Horley, P.P.; Chupyra, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In the framework of the one-dimension field model of semiconductor simultaneosly subjected to the action of carrier-warming electric field and two quasi-monochromatic light waves the authors have numerically calculated the ...
  • Electric properties of TlInS₂ single crystals 
    Mustafaeva, S.N.; Ismailov, A.A.; Akhmedzade, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Injection currents are studied in high-resistive layer of TlInS2 single crystals and the following parameters were determined: equilibrium concentration of charge carriers in the allowed band p0 = 1.67⋅10¹⁰ cm⁻³; concentration ...
  • Electromagnetic resonance absorption in metallic gratings 
    Fitio, V.M.; Laba, H.P.; Bobitski, Y.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Reflection of electromagnetic waves with the 1.5 μm length from a metallic grating (silver) with rectangular groove profile was analyzed using the method of coupled waves. Appearance of the waveguide effect in a dielectric ...
  • Estimation of frequency characteristics of photodiode determined by motion of charge carriers in the space-charge region 
    Danilyuk, A.I.; Dobrovolskiy, Yu.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Frequency characteristics of photodiode determined by motion of charge carriers in the space-charge region was estimated. It was shown that the current in the external circuit depends on two functions (their specific kind) ...
  • Excitons and trions in spherical semiconductor quantum dots 
    Kupchak, I.M.; Kryuchenko, Yu.V.; Korbutyak, D.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    An original iterative procedure has been developed to obtain energy spectrum of neutral and charged excitons (positive and negative trions) in spherical semiconductor quantum dots (QD) imbedded into a dielectric material. ...
  • Fabrication and characterization of a 0.14 μm CMOS device using ATHENA and ATLAS simulators 
    Ahmad, Ibrahim; Ho, Yeap Kim; Majlis, Burhanuddin Yeop (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    A 0.14 µm CMOS transistor with two levels of interconnection was designed and simulated to investigate its functionality and characteristics. ATHENA and ATLAS simulators were used to simulate the fabrication process and ...
  • Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells 
    Konoreva, O.; Opilat, V.; Pinkovska, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In this work, GaP p-n junctions used in light-diode manufacturing were studied using the electrophysical methods at various temperatures. Current-voltage characteristics of some diodes, controlled by PC and measured in the ...
  • Ge/Si heterojunction photodetector for 1.064 μm laser pulses 
    Ismail, Raid A.; Koshapa, Jospen; Abdulrazaq, Omar A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Iso- and anisotype heterojunction Ge/Si photodetectors were made by depositing Ge layer onto monocrystalline Si using a vacuum evaporation technique. These detectors before and after annealing were utilized to detect 1.064 ...
  • Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy 
    Rogozin, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Epitaxial undoped and N-doped ZnO films were obtained using the method of radical beam gettering epitaxy. Structural and luminescent properties of the obtained films were researched. In both cases, there can be seen ...
  • Holographic interferometry under phase distortions 
    Derzhypolska, L.A.; Gnatovskiy, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    An impact of non-stationary phase distortions in transfer section of a holographic interferometer on the quality of formed interference fringes in an interferogram was under investigation. A mathematical model to analyze ...
  • Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs 
    Khemissi, S.; Merabtine, N.; Zaabat, M.; Kenzai, C.; Saidi, Y.; Amourache, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In the information sciences such as computer science, telecommunications, the treatment of signal or image transmission, the field effect components play an important role. In the frame of our work, we are interested in ...
  • Investigation of the effective mass of electrons in solid solutions Hg₁₋x₋y₋zAxByCzTe 
    Ostapov, S.E.; Zhikharevich, V.V.; Deibuk, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    This paper presents theoretical investigation on the influence of manganese and zinc in solid solutions of Hg₁₋x₋y₋zAxByCzTe on changes in the electron effective mass.
  • Investigation on the bandgap of semiconductor solid solution Hg₁₋x₋y₋zCdxMnyZnzTe 
    Zhikharevich, V.V.; Ostapov, S.E.; Deibuk, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The paper presents a investigation on the bandgap of a new narrow-gap semiconductor solid solution Hg₁₋x₋y₋zCdxMnyZnzTe via optical measurements. Modeling of the edge of fundamental absorption for Hg₁₋x₋y₋zCdxMnyZnzTe is ...
  • Kinoform syntesis as an improved method to form a concealed image in optical security devices 
    Braginets, E.V.; Girnyk, V.I.; Kostyukevych, S.A.; Kurashov, V.N.; Soroka, A.A.; Moskalenko, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    It is well known that one of the basic functions of security holograms is the maximal complication of their non-authorized reproduction, in other words – counterfeiting. To solve the problem, concealed images that can be ...
  • Landau parameter of elasticity 
    Merabtine, N.; Bousnane, Z.; Benslama, M.; Boussaad, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Based on the consideration given by the Ginzburg-Landau (GL) theory according to the variational principle, we assume that the microscopic Gibbs function density given by [1] ∫VGsdV = ∫(Fs - 1/4pBH)dv must be stationary ...
  • Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication 
    Savkina, R.K.; Sizov, F.F.; Smirnov, A.B.; Tetyorkin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Electrophysical parameters of Hg₁₋xCdxTe thin films grown by liquid-phase epitaxy and molecular-beam epitaxy were investigated before and after the high-frequency sonication ( fUS = 7.5 MHz, WUS ~ 10⁴ W/m²). It was determined ...

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