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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2006, том 9 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2006, том 9 за назвою

Сортувати за: Порядок: Результатів:

  • Cadmium phosphide as a new material for infrared converters 
    Stepanchikov, D.; Shutov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Possible use of cadmium phosphide (Cd₃P₂) for infrared converter systems has been debated. The interband absorption coefficient calculations has been executed for single crystals of n-Cd₃P₂ and interpreted in the exact ...
  • CdSe nanoparticles grown with different chelates 
    Bacherikov, Yu.Yu.; Davydenko, M.O.; Dmytruk, A.M.; Dmitruk, I.M.; Lytvyn, P.M.; Prokopenko, I.V.; Romanyuk, V.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Modified reverse micelles method allowing fabrication of CdSe nanoparticles in toluene solution in series of sizes with average diameter from 1.2 to 3.2 nm and size distribution ∼ 12-30 % is presented. Simple empirical ...
  • Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation 
    Houk, Y.; Nazarov, A.N.; Turchanikov, V.I.; Lysenko, V.S.; Andriaensen, S.; Flandre, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    An investigation of radiation effect on edgeless accumulation mode (AM) p-channel and fully-depleted enhancement mode (EM) n-channel MOSFETs, fabricated on UNIBOND silicon on insulatior wafers (SOI), is presented in the ...
  • Conductivity and photoconductivity peculiarities observed in C₆₀ layers 
    Kanev, St.; Nenova, Z.; Koprinarov, N.; Ivanova, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Thin layers of various thickness prepared from C60 with traces of C70 were studied. They were deposited by thermal evaporation on quartz, glass, p-Si or n-Si substrates. An apparatus fixing current values every 3 ms was ...
  • Confined LO phonon limited free carrier absorption in quantum well wires 
    Ibragimov, G.B.; Huseyin, Derin; Halil, Yaraneri (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The theory of free-carrier absorption is given for quantum well wire for the case where the carriers are scattered by confined longitudinal-optical (LO) phonons and the radiation field is polarized along the length of the ...
  • Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe 
    Babentsov, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The defects in CdTe and CdSe nanocrystals were studied by comparing the photoluminescence spectra and cyclic voltammetry dependences, which enabled us to identify two main electron levels in CdTe and four in CdSe NCs. In ...
  • Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry 
    Odarych, V.A.; Sarsembaeva, A.Z.; Vuichyk, M.V.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The multiangular ellipsometric measurements were conducted at two wavelengths 435 and 579 nm on the system that contains cadmium telluride film deposited onto the monocrystalline silicon substrate. The refraction index and ...
  • Determination of potential distribution in a three-barrier structure 
    Yodgorova, D.M.; Zoirova, L.X.; Karimov, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Model m₁-p-n-m₂ structures with three barriers were considered; construction and technology of manufacturing the three-barrier m₁-pAlGaInAs-nGaAs-m₂ structure are presented. Experimental methods to determine voltages across ...
  • Diamond microcrystallites formation through the phase transition graphite→liquid→diamond 
    Semikina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The paper presents the results of synthesizing the diamond microparticles (3 to 5 µm) in a spark discharge in hydrogen at the low pressure (100 Torr). The obtained growth rate ~5 µm/s is uniquely high. Our analysis of the ...
  • Disappearance of aligning properties of deposited SiOx films as caused by external factors 
    Kolomzarov, Yu.; Oleksenko, P.; Sorokin, V.; Tytarenko, P.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Thermal and degradation stability of SiOx aligning films deposited by cathode reactive sputtering (CRS) in glow discharge plasma were investigated. It was shown that a heat treatment and other external factors initiate ...
  • Discrimination of the saturated vapours of alcohols by the responses of assembly of piezoquartz sensors covered with metal stearates and their complexes with octadecylamine 
    Filippov, A.P.; Strizhak, P.E.; Denisyuk, D.I.; Serebry, T.G.; Ivaschenko, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The sensitivity of sensor assembly based on piezoquartz resonators (PQR) with the chemical coatings of the specified type relatively to the saturated vapours of several lowest alcohols is investigated. As the chemical ...
  • Dynamic electrophysical characterization of porous silicon humidity sensing 
    Bravina, S.; Morozovsky, N.; Boukroub, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The results of the investigation of changes of parameters of bipolar and unipolar dynamic current-voltage characteristics and transient currents as well as dynamic bipolar charge-voltage loops connected with the pulse ...
  • Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films 
    Indutnyy, I.Z.; Lysenko, V.S.; Min'ko, V.I.; Nazarov, A.N.; Tkachenko, A.S.; Shepeliavyi, P.E.; Dan'ko, V.A.; Maidanchuk, I.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Effect of hydrogen radiofrequency plasma and chemical treatment on photoluminescence (PL) spectra of SiOx layers containing Si nanoparticles are investigated. Considerable PL intensity growth in the samples containing Si ...
  • Effect of symmetry center losses on energy bands and carrier kinematics in Zn₃As₂ and Cd₃As₂ 
    Chuiko, G.; Don, N.; Martyniuk, V.; Stepanchikov, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The comparative analysis of the band structure and carrier kinematics for Zn₃As₂ and Cd₃As₂ has been executed. The influence of presence and absence of symmetry center in different crystalline phases of the above materials ...
  • Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals 
    Makara, V.A.; Steblenko, L.P.; Kolchenko, Yu.L.; Naumenko, S.M.; Lisovsky, I.P.; Mazunov, D.O.; Mokliak, Yu.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    IR spectroscopy study is indicative of the change in the relative concentration of interstitial oxygen in silicon monocrystals after their treatment by using the magnetic field. This is an evidence of a considerable effect ...
  • Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase 
    Shutov, S.V.; Baganov, Ye.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Influence of strains that appear in GaSb/InAs heterosystem on heteroepitaxial layer planarity is considered. It is shown that minimal supercooling of solution-melt at the saturation temperature of gallium antimonide in ...
  • Electric field and carrier concentration distributions in the semiconductor under photorefractive Gunn effect 
    Gorley, P.M.; Horley, P.P.; Chupyra, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In the framework of the one-dimension field model of semiconductor simultaneosly subjected to the action of carrier-warming electric field and two quasi-monochromatic light waves the authors have numerically calculated the ...
  • Electric properties of TlInS₂ single crystals 
    Mustafaeva, S.N.; Ismailov, A.A.; Akhmedzade, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Injection currents are studied in high-resistive layer of TlInS2 single crystals and the following parameters were determined: equilibrium concentration of charge carriers in the allowed band p0 = 1.67⋅10¹⁰ cm⁻³; concentration ...
  • Electromagnetic resonance absorption in metallic gratings 
    Fitio, V.M.; Laba, H.P.; Bobitski, Y.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Reflection of electromagnetic waves with the 1.5 μm length from a metallic grating (silver) with rectangular groove profile was analyzed using the method of coupled waves. Appearance of the waveguide effect in a dielectric ...
  • Estimation of frequency characteristics of photodiode determined by motion of charge carriers in the space-charge region 
    Danilyuk, A.I.; Dobrovolskiy, Yu.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Frequency characteristics of photodiode determined by motion of charge carriers in the space-charge region was estimated. It was shown that the current in the external circuit depends on two functions (their specific kind) ...

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