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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10 за назвою

Сортувати за: Порядок: Результатів:

  • Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist 
    Min’ko, V.I.; Shepeliavyi, P.E.; Indutnyy, I.Z.; Litvin, O.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Application of inorganic photoresist based on chalcogenide films for fabrication of submicrometer periodic relief on silicon wafers was investigated. For this purpose, technological process of resistive two-layer ...
  • Features of main band parameters for crystalline modification of Cd₃As₂ without center of symmetry 
    Chuiko, G.P.; Dvornik, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The so-called loops of extremes exist for the modification of Cd₂As₂ without the center of symmetry. The maximal spin splitting of bands is observable along a direction normal to the main crystalline axis. The number of ...
  • Finite-difference time-domain method calculation of light propagation through H-PDLC 
    Kubytskyi, V.; Reshetnyak, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Presented is the study of the diffraction properties of transmission holographic polymer dispersed liquid crystal (H-PDLC) grating. We constructed a two-dimensional model of H-PDLC film with cylindrical LC droplets. ...
  • Flexible electroluminescent panels 
    Vlaskin, V.I.; Vlaskina, S.I.; Koval, O.Yu.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Recently developed ac ZnS-powder electroluminescence (EL) devices have flexibility (thickness is about 60 µm) and can be multisegment, multicolor, as well as rolled and bent. All colors (white, blue, blue-green, green, ...
  • Frequency-dependent dielectric coefficients of TlInS₂ amorphous films 
    Mustafaeva, S.N.; Asadov, M.M.; Qahramanov, K.Sh. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The frequency dispersion of the loss tangent (tgδ) and the ac conductivity (σac) of amorphous films prepared by evaporation of TlInS₂ has been investigated at frequencies f = 5⋅10⁴…3.5⋅10⁷ Hz. It is shown that, at f > ...
  • Graded refraction index antireflection coatings based on silicon and titanium oxides 
    Abdelhakim Mahdjoub (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Thin films with a graded refraction index constituted from silicon and titanium oxides were deposited by plasma enhanced chemical vapor deposition using electron cyclotron resonance. A plasma of oxygen reacted with two ...
  • HgCdTe quantum wells grown by molecular beam epitaxy 
    Dvoretsky, S.A; Ikusov, D.G.; Kvon, Z.D.; Mikhailov, N.N.; Remesnik, V.G.; Smirnov, R.N.; Sidorov, Yu.G.; Shvets, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    CdxHg₁₋xTe-based (x = 0 – 0.25) quantum wells (QWs) of 8 – 22 nm in thickness were grown on (013) CdTe/ZnTe/GaAs substrates by molecular beam epitaxy. The composition and thickness (d) of wide-gap layers (spacers) were ...
  • Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System 
    Moskvin, P.P.; Rashkovetsky, L.V.; Khodakovsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    By comparing the results of calculations concerning the dependence of the parameters of a layer on the growth conditions with and without regard for mechanical strains in the growing system, we have analyzed the influence ...
  • Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate 
    Lysiuk, V.O.; Staschuk, V.S.; Kluy, M.I.; Vakulenko, O.V.; Poperenko, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The systems “thin Ni film – lithium niobate” and “thin Pd film – lithium tantalate” are implanted by Ar⁺ ions with an energy of 100 keV and a dose of 10¹⁶ cm⁻². Analyses of the systems by AFM and SEM have shown that the ...
  • Influence of some physico-chemical factors on properties of electrodes that decompose water catalytically 
    Primachenko, V.E.; Serba, O.A.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have investigated the current creation accompanied by the water decomposition H₂O → OH + H caused by various catalytically active electrodes with different electrochemical potentials, both without external electric ...
  • Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures 
    Lysenko, V.S.; Tyagulsky, I.P.; Osiyuk, I.N.; Nazarov, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The results of experiments on the influence of recharging the electron traps in a Si-SiO₂ transition layer on the low-temperature characteristics of fully depleted silicon in insulator MOSFET devices are presented. It ...
  • Information conception of image perception at solid-state lighting 
    Osinsky, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    An information-technological approach to the development of integral white light sources is introduced. It is based on the technology of epitaxial growth of nanostructures in multicomponent solid-state solutions of A³B⁵ ...
  • Investigation of electron-phonon interaction in bulk and nanostructured semiconductors 
    Yaremko, A.M.; Yukhymchuk, V.O.; Dzhagan, V.M.; Valakh, M.Ya.; Azhniuk, Yu.M.; Baran, J.; Ratajczak, H.; Drozd, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    In this paper, the problem of electron-phonon interaction (EPI) innsemiconductor crystals and quantum dots (QDs) is considered. It is shown that the model of strong EPI developed for organic molecular crystals can be ...
  • Investigation of light polarization in CdS in the presence of two-photon absorption 
    Kulish, M.R.; Lisitsa, M.P.; Malysh, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    It is shown that, under the two-photon absorption in CdS, the increase in the azimuth of polarization causes a smooth change of the large semi-axis angle rotation, ellipticity, focal parameter, and eccentricity of the ...
  • Investigation of the direct/indirect exciton transition in the double quantum well system based on Cd₁₋yMgyTe/ Cd₁₋xMnxTe in applied magnetic field 
    Lev, S.B.; Sugakov, V.I.; Vertsimakha, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The energy levels, wave functions, and lifetimes of direct and indirect excitons in a CdTe-based double quantum well system with non-magnetic (Mg) and magnetic (Mn) ions in a magnetic field are found. It is shown that, ...
  • Isothermal growth kinetics of CdxHg₁₋xTe LPE layers 
    Moskvin, P.P.; Khodakovsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Within the diffusion-limited growth model, the kinetic analysis of the LPE process for CdxHg₁₋xTe solid solutions is carried out. It is assumed that a phase equilibrium exists on the interface, and the concentrations ...
  • Laser-induced incandescence in aqueous carbon black suspensions: the role of particle vaporization 
    Rulik, Ju.Ju.; Mikhailenko, N.M.; Zelensky, S.E.; Kolesnik, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Non-linear properties and the kinetics of laser-induced incandescence in aqueous carbon black suspensions are investigated. For explanation of the observed properties, a model, which takes into account a decrease of the ...
  • Local properties of impurity and defects investigated by high pressure spectroscopy 
    Grinberg, Marek (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Using the high-pressure spectroscopy, the pressure shifts of the luminescence related to the d-d transitions in transition metal ions and d-f transitions in rare earth ones, which interact with the nearest neighbor host ...
  • Luminescence of the pyrazoline dye in nanostructured zeolite matriх 
    Beliak, I.V.; Kravets, V.G.; Kryuchin, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    A physicotechnical fundamental of the multilayer photoluminescent media development has been considered. The quantum yield and relaxation time of luminescence were found as most significant values of the recording material. ...
  • Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures 
    Sachenko, A.V.; Sokolovskyi, I.O.; Kazakevitch, A.; Shkrebtii, A.I.; Gaspari, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    An analytical formalism to optimize the photoconversion efficiency η of hydrogenated amorphous silicon-based (a-Si:H) solar cells has been developed. This model allows firstly the optimization of a p⁺ -i-n sandwich in ...

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