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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10 за назвою

Сортувати за: Порядок: Результатів:

  • Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers 
    Red’ko, R.; Red’ko, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    To study the influence of microwave irradiation on a spectrum of defect states in porous InP, we have measured the luminescence spectra within the range 0.50 to 2.04 eV at 77 K before and after short and long (up to 600 ...
  • Electron energy spectrum in a spherical quantum dot with smooth confinement 
    Holovatsky, V.; Voitsekhivska, O.; Gutsul, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The electron energy spectrum in a quantum dot (QD) with smooth dependences of the quasiparticle potential energy and the effective mass at the interface between semiconductor media is calculated in the effective mass ...
  • Electron, hole, and exciton spectra in a quantum wire crossing the quantum well 
    Makhanets, O.M.; Gryschuk, A.M.; Tkach, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The electron, hole, and exciton energy spectra are calculated within the effective mass and rectangular potential approximations for a combined semiconductor nanoheterosystem consisting of a cylindrical semiconductor ...
  • Electro-optical hybrid logic gates 
    Ekkurthi Sreenivasa Rao; Satyam, M.; Lal Kishore, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    An Electro-Optical Hybrid Logic Gate is defined as a circuit that accepts either electrical or optical signals and produces both electrical and optical signals. This paper explores the feasibility of developing hybrid ...
  • Entropic potential as manifold for the reduced entropy representations in superconductivity 
    Bousnane, Z.; Benslama, M.; Merabtine, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The “cold” causes superconductivity phenomenon, as a measurement process generating a phase transitions of the second order, and also permitting the rise of phenomenological parameters, but not allowing the stability of ...
  • Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers 
    Danilyuk, A.I.; Dobrovolskiy, Yu.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have estimated the frequency characteristics of a photodiode determined by the motion of charge carriers in the space-charge region on the surface generation of carriers in two extreme cases of unalloyed and evenly ...
  • Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist 
    Min’ko, V.I.; Shepeliavyi, P.E.; Indutnyy, I.Z.; Litvin, O.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Application of inorganic photoresist based on chalcogenide films for fabrication of submicrometer periodic relief on silicon wafers was investigated. For this purpose, technological process of resistive two-layer ...
  • Features of main band parameters for crystalline modification of Cd₃As₂ without center of symmetry 
    Chuiko, G.P.; Dvornik, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The so-called loops of extremes exist for the modification of Cd₂As₂ without the center of symmetry. The maximal spin splitting of bands is observable along a direction normal to the main crystalline axis. The number of ...
  • Finite-difference time-domain method calculation of light propagation through H-PDLC 
    Kubytskyi, V.; Reshetnyak, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Presented is the study of the diffraction properties of transmission holographic polymer dispersed liquid crystal (H-PDLC) grating. We constructed a two-dimensional model of H-PDLC film with cylindrical LC droplets. ...
  • Flexible electroluminescent panels 
    Vlaskin, V.I.; Vlaskina, S.I.; Koval, O.Yu.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Recently developed ac ZnS-powder electroluminescence (EL) devices have flexibility (thickness is about 60 µm) and can be multisegment, multicolor, as well as rolled and bent. All colors (white, blue, blue-green, green, ...
  • Frequency-dependent dielectric coefficients of TlInS₂ amorphous films 
    Mustafaeva, S.N.; Asadov, M.M.; Qahramanov, K.Sh. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The frequency dispersion of the loss tangent (tgδ) and the ac conductivity (σac) of amorphous films prepared by evaporation of TlInS₂ has been investigated at frequencies f = 5⋅10⁴…3.5⋅10⁷ Hz. It is shown that, at f > ...
  • Graded refraction index antireflection coatings based on silicon and titanium oxides 
    Abdelhakim Mahdjoub (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Thin films with a graded refraction index constituted from silicon and titanium oxides were deposited by plasma enhanced chemical vapor deposition using electron cyclotron resonance. A plasma of oxygen reacted with two ...
  • HgCdTe quantum wells grown by molecular beam epitaxy 
    Dvoretsky, S.A; Ikusov, D.G.; Kvon, Z.D.; Mikhailov, N.N.; Remesnik, V.G.; Smirnov, R.N.; Sidorov, Yu.G.; Shvets, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    CdxHg₁₋xTe-based (x = 0 – 0.25) quantum wells (QWs) of 8 – 22 nm in thickness were grown on (013) CdTe/ZnTe/GaAs substrates by molecular beam epitaxy. The composition and thickness (d) of wide-gap layers (spacers) were ...
  • Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System 
    Moskvin, P.P.; Rashkovetsky, L.V.; Khodakovsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    By comparing the results of calculations concerning the dependence of the parameters of a layer on the growth conditions with and without regard for mechanical strains in the growing system, we have analyzed the influence ...
  • Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate 
    Lysiuk, V.O.; Staschuk, V.S.; Kluy, M.I.; Vakulenko, O.V.; Poperenko, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The systems “thin Ni film – lithium niobate” and “thin Pd film – lithium tantalate” are implanted by Ar⁺ ions with an energy of 100 keV and a dose of 10¹⁶ cm⁻². Analyses of the systems by AFM and SEM have shown that the ...
  • Influence of some physico-chemical factors on properties of electrodes that decompose water catalytically 
    Primachenko, V.E.; Serba, O.A.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have investigated the current creation accompanied by the water decomposition H₂O → OH + H caused by various catalytically active electrodes with different electrochemical potentials, both without external electric ...
  • Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures 
    Lysenko, V.S.; Tyagulsky, I.P.; Osiyuk, I.N.; Nazarov, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The results of experiments on the influence of recharging the electron traps in a Si-SiO₂ transition layer on the low-temperature characteristics of fully depleted silicon in insulator MOSFET devices are presented. It ...
  • Information conception of image perception at solid-state lighting 
    Osinsky, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    An information-technological approach to the development of integral white light sources is introduced. It is based on the technology of epitaxial growth of nanostructures in multicomponent solid-state solutions of A³B⁵ ...
  • Investigation of electron-phonon interaction in bulk and nanostructured semiconductors 
    Yaremko, A.M.; Yukhymchuk, V.O.; Dzhagan, V.M.; Valakh, M.Ya.; Azhniuk, Yu.M.; Baran, J.; Ratajczak, H.; Drozd, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    In this paper, the problem of electron-phonon interaction (EPI) innsemiconductor crystals and quantum dots (QDs) is considered. It is shown that the model of strong EPI developed for organic molecular crystals can be ...
  • Investigation of light polarization in CdS in the presence of two-photon absorption 
    Kulish, M.R.; Lisitsa, M.P.; Malysh, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    It is shown that, under the two-photon absorption in CdS, the increase in the azimuth of polarization causes a smooth change of the large semi-axis angle rotation, ellipticity, focal parameter, and eccentricity of the ...

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