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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10 за датою випуску

Сортувати за: Порядок: Результатів:

  • Frequency-dependent dielectric coefficients of TlInS₂ amorphous films 
    Mustafaeva, S.N.; Asadov, M.M.; Qahramanov, K.Sh. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The frequency dispersion of the loss tangent (tgδ) and the ac conductivity (σac) of amorphous films prepared by evaporation of TlInS₂ has been investigated at frequencies f = 5⋅10⁴…3.5⋅10⁷ Hz. It is shown that, at f > ...
  • Characterization of nanoscaled films on flat and grating substrates as some elements of plasmonics 
    Dmitruk, N.L.; Mayeva, O.I.; Korovin, A.V.; Mamykin, S.V.; Sosnova, M.V.; Yastrubchak, O.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The optical properties of multilayer structures consisting of dielectric, conductivity-oxide and nanoscaled metal layers, deposited on the planar substrates (witness samples) and surface relief ones (diffraction gratings) ...
  • A facile route for preparation of CdS nanoparticles 
    Maleki, M.; Sasani Ghamsari, M.; Mirdamadi, Sh.; Ghasemzadeh, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    CdS nanoparticles have been synthesized by a chemical reaction route using ethylenediamine as a complexing agent. The nanoparticles were characterized using techniques such as X-ray powder diffraction (XRD), scanning ...
  • Luminescence of the pyrazoline dye in nanostructured zeolite matriх 
    Beliak, I.V.; Kravets, V.G.; Kryuchin, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    A physicotechnical fundamental of the multilayer photoluminescent media development has been considered. The quantum yield and relaxation time of luminescence were found as most significant values of the recording material. ...
  • Template-based growth of TiO₂ nanorods by sol-gel process 
    Sadeghzadeh-Attar, A.; Sasani Ghamsari, M.; Hajiesmaeilbaigi, F.; Mirdamadi, Sh. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    In this paper, the preparation of TiO2 nanorods by sol-gel-template process has been considered. The prepared sols were characterized by using FTIR spectroscopy, and the obtained nanorods were characterized by X-ray ...
  • Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist 
    Min’ko, V.I.; Shepeliavyi, P.E.; Indutnyy, I.Z.; Litvin, O.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Application of inorganic photoresist based on chalcogenide films for fabrication of submicrometer periodic relief on silicon wafers was investigated. For this purpose, technological process of resistive two-layer ...
  • Polarization analysis of birefringence in uniaxially deformed silicon crystals 
    Berezhinsky, L.I.; Berezhinsky, I.L.; Pipa, V.I.; Matyash, I.Ye.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The birefringence induced by uniaxial compression in low-doped silicon crystals was investigated both theoretically and experimentally. The circular components of the Stokes vector in the transmission and reflectance ...
  • Calculation of the metal reflectivity with taking polarization into consideration 
    Vakulenko, O.V.; Severin, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Optical properties of free electrons in the conduction band of metal are considered. It is shown that the conventional Drude theory does not take shielding of the external electrical field by mobile electrons into account. ...
  • The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties 
    Horvat, G.T.; Kondratenko, O.S.; Loja, V.Ju.; Myholynets, I.M.; Rosola, I.J.; Jurkovуch, N.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The mechanisms of formation of modified thin-film structures based on GeSe(S) systems with different Al, Bi, Pb, Te, In modifiers evaporated in vacuum have been determined. The process of their growth and the structure ...
  • Graded refraction index antireflection coatings based on silicon and titanium oxides 
    Abdelhakim Mahdjoub (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Thin films with a graded refraction index constituted from silicon and titanium oxides were deposited by plasma enhanced chemical vapor deposition using electron cyclotron resonance. A plasma of oxygen reacted with two ...
  • Simulation of applied principles of envelope functions for Fabry-Perot spectroscopy of plane wave for single-layer structures 
    Kosobutskyy, P.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The method to obtain analytical expressions for envelope functions in spectra of normal incidence light reflection and transmission by single-layer structures is proposed
  • Electro-optical hybrid logic gates 
    Ekkurthi Sreenivasa Rao; Satyam, M.; Lal Kishore, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    An Electro-Optical Hybrid Logic Gate is defined as a circuit that accepts either electrical or optical signals and produces both electrical and optical signals. This paper explores the feasibility of developing hybrid ...
  • 1,4-bis(2,2-diphenylethenyl)benzene as an efficient emitting material for organic light emitting diodes 
    Fenenko, L.; Guoliang Mao; Akihiro Orita; Junzo Otera; Smertenko, P.; Svechnikov, G.; Jun-ichi Nishide; Hiroyuki Sasabe; Chihaya Adachi (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We report on the photophysical properties of 1,4-bis(2,2-diphenylethenyl)benzene (PEB) in a solution and a solid state. A poor blue photoluminescence efficiency of PEB in a solution dramatically increases in the deposited ...
  • Finite-difference time-domain method calculation of light propagation through H-PDLC 
    Kubytskyi, V.; Reshetnyak, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Presented is the study of the diffraction properties of transmission holographic polymer dispersed liquid crystal (H-PDLC) grating. We constructed a two-dimensional model of H-PDLC film with cylindrical LC droplets. ...
  • Effect of oxidation of catalytically active silicon-based electrodes on water decomposition 
    Primachenko, V.E.; Serba, O.A.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    In this work, we continue to study the revealed phenomenon of current creation in the electrochemical system with distilled water during its decomposition without any applied external voltage. Investigated are catalytically ...
  • Entropic potential as manifold for the reduced entropy representations in superconductivity 
    Bousnane, Z.; Benslama, M.; Merabtine, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The “cold” causes superconductivity phenomenon, as a measurement process generating a phase transitions of the second order, and also permitting the rise of phenomenological parameters, but not allowing the stability of ...
  • The current density order based on the Ginzburg-Landau description 
    Bousnane, Z.; Merabtine, N.; Benslama, M.; Bousaad, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The goal of this survey is to deduce the grandeurs, or the set of grandeurs, from which is derived simultaneously as a linear combination of densities of states, current density matrix and the reduced entropy, according ...
  • Investigation of light polarization in CdS in the presence of two-photon absorption 
    Kulish, M.R.; Lisitsa, M.P.; Malysh, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    It is shown that, under the two-photon absorption in CdS, the increase in the azimuth of polarization causes a smooth change of the large semi-axis angle rotation, ellipticity, focal parameter, and eccentricity of the ...
  • Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate 
    Lysiuk, V.O.; Staschuk, V.S.; Kluy, M.I.; Vakulenko, O.V.; Poperenko, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The systems “thin Ni film – lithium niobate” and “thin Pd film – lithium tantalate” are implanted by Ar⁺ ions with an energy of 100 keV and a dose of 10¹⁶ cm⁻². Analyses of the systems by AFM and SEM have shown that the ...
  • On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes 
    Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Klad’ko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Milenin, V.V.; Sveshnikov, Yu.N.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We investigated a current flow mechanism in the Au−TiBx−n-GaN−i-Al₂O₃ Schottky barrier diodes, in which the space-charge region width is much over the de Broglie wavelength in GaN. An analysis of the temperature dependences ...

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