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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 1 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 1 за назвою

Сортувати за: Порядок: Результатів:

  • Radiation dynamics of injection lasers with saturating absorber in resonator 
    Manak, I.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The structure of a GaAlAs laser with saturating absorber in a resonator and a method of research of the light generation dynamics with the use of an optical stroboscopic oscilloscope OSO-1 which has a time resolution of ...
  • Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base 
    Yodgorova, D.M.; Karimov, A.V.; Giyasova, F.A.; Karimova, D.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The results of research of photoelectric phenomena in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure are presented. The photo-voltaic effect observable in a wide range of the spectrum (0.4-2 µm) is explained by ...
  • Selective unequal-thickness thin-film filters for IR spectral region 
    Yaremchuk, I.Ya.; Fitio, V.M.; Bobitski, Ya.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    A new five-layer structure of the dielectric interference filter for the infra-red region of spectrum is investigated. The main spectral parameters of such a narrow-band filter are determined. The dependence of the ...
  • Self-purification effect in CdTe:Gd crystals 
    Nikonyuk, E.S.; Shlyakhovyi, V.L.; Kovalets, M.O.; Kuchma, M.I.; Zakharuk, Z.I.; Savchuk, A.I.; Yuriychuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The temperature dependences (T = 80 – 420 K) of the concentration of charge carriers and the Hall mobility in undoped CdTe and CdTe:Gd single crystals grown by the Bridgman method are studied. It is found that the ...
  • Shack-hartmann wavefront sensor with holographic lenslet array for the aberration measurements in a speckle field 
    Podanchuk, D.V.; Kurashov, V.N.; Dan’ko, V.P.; Kotov, M.M.; Sutyagina, N.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The application of a Shack-Hartmann sensor with holographic lenslet array to the measurements of wavefront aberrations in a speckle field is offered. The main feature of the method is that the tested wave front can be ...
  • Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers 
    Yodgorova, D.M.; Karimov, A.V.; Giyasova, F.A.; Saidova, R.A.; Yakubov, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The results of studies of the spectral characteristics of the m-n⁰-n-structure with a base area on the basis of thin epitaxial specified undoped GaInAs and oxygendoped AlGaAs layers are presented. It is experimentally ...
  • The composition effect on the bowing parameter in the cubic InGaN, AlGaN and AlInN alloys 
    Berrah, S.; Boukortt, A.; Abid, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Numerical simulation based on FP-LAPW calculations is applied to study direct and indirect band gap energy of the cubic AlxGa₁₋xN, InxGa₁₋xN and InxAl₁₋xN alloys.The direct and indirect band-gap bowing parameter is ...
  • Theoretical model of temperature dynamics of solid surface of material under action of laser radiation 
    Shmeleva, L.V.; Suprun, A.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    We have developed a theoretical model that describes the interaction of intense pulsed flows of energy with matter and is based on the account of local phase transitions at the destruction of a surface. In the frame of ...
  • Universal Electro-Optical Hybrid Logic Gates 
    Ekkurthi Sreenivasa Rao; Satyam, M.; Lal Kishore, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    An Electro-Optical Hybrid Logic Gate is defined as a circuit which accepts either electrical or optical signals and produces both electrical and optical signals. This paper explores the feasibility to develop universal ...
  • Using ellipsometry methods for depth analyzing the optical disc data layer relief structures 
    Kravets, V.G.; Gorbov, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    We studied the relief depth of the data layer formed in a glass disk by ion beam etching process with using classical ellipsometry at the constant wavelength 632.8 nm for different angles of incidence. It was found that ...

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