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Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2008, том 11
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 1
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Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base
Інший ID:
PACS 42.79.Pw, 68.55.Ac
Посилання:
Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base / D.M. Yodgorova, A.V. Karimov, F.A. Giyasova, D.A. Karimova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 75-78. — Бібліогр.: 8 назв. — англ.
Дата:
2008
Переглядів:
621
Завантажень:
350
Анотація:
The results of research of photoelectric phenomena in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure are presented. The photo-voltaic effect
observable in a wide range of the spectrum (0.4-2 µm) is explained by different signs of
the photo EMF created by the separation of photocarriers in the energy barrier and from
the levels of intrinsic defects as well as deep impurities of oxygen in the quasineutral
base. A mechanism of photosensitivity of thin base structures with Schottky-Mott’s
barrier under photovoltaic conditions is offered.
