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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12 за датою випуску

Сортувати за: Порядок: Результатів:

  • Effect of Si infiltration method on the properties of biomorphous SiC 
    Kiselov, V.S.; Kalabukhova, E.N.; Sitnikov, A.A.; Lytvyn, P.M.; Poludin, V.I.; Yukhymchuk, V.O.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Two types of wood-based biomorphous SiC composites with different microstructure were obtained by infiltration of carbon template with liquid or vapour silicon. The oak, pine, lilac, walnut, acacia woods available in ...
  • Bi₂Te₃-хSex 〈Ag〉 (х = 0.04) nanocrystal formation 
    Aleskerov, F.K.; Kahramanov, S.K.; Asadov, М.М.; Kahramanov, K.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The results of experimental researches dealing with formation of nanometricsize doped (Ag) layers on the surface (0001) between Te⁽¹⁾–Te⁽¹⁾ telluride quintet layers in Bi₂Te₃-хSex 〈Ag〉 (х = 0.04) crystals under directed ...
  • Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures 
    Red’ko, R. R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    We present the results of investigations of the effect caused by low magnetic field treatment on InP single crystals impurity-defect composition. This effect was found when studying the radiative recombination (luminescence) ...
  • Light depolarization by inhomogeneous linear birefringent media 
    Savenkov, S.N.; Oberemok, Y.A.; Yakubchak, V.V.; Aulin, Y.V.; Barchuk, О.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The purpose of the article is to provide rigorous analysis of light depolarization by inhomogeneous linear birefringent media in single scattering case. The object under investigation is a lossless anisotropic crystalline ...
  • Properties of junction diodes under conditions of bisotropic strains 
    Borblik, V.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In consideration of influence of technological strains on characteristics of junction diodes located on surface of silicon wafers, biaxial character of such strains has taken into account. The cases of (001)- and ...
  • Specific thermoemf and Hall-effect in crystals with monopolar conductivity 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The Seebeck coefficient α and Hall constant RH are calculated for monopolar crystal as based of quantum kinetic equation. It is shown that α and RH in the case of simple isotropic band do not depend on relaxation ...
  • Detection of biomolecules using optoelectronic biosensor based on localized surface plasmon resonance. Nanoimprint lithography approach 
    Chegel, V.; Luca, B.; Guo, J.; Lopatynskyi, A.; Lopatynska, O.; Poperenko, L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In this work, we use a nanoimprint lithography fabrication technology to create uniformly-oriented and homogenous noble metal nanoparticle arrays with wellcontrolled size, shape and spacing, which can be the basis platform ...
  • Charge storage characteristics of gold nanoparticles embedded in alumina matrix 
    Bratus, O.; Evtukh, A.; Kaganovich, E.; Kizjak, A.; Kizjak, I.; Manoilov, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The processes of charge accumulation in the nonvolatile memory metal-oxidesilicon capacitors with gold nanoparticles floating gate formed by the pulsed laser deposition method are investigated. The regularities of formation ...
  • Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions 
    Nazarov, A.N.; Osiyuk, I.N.; Tiagulskyi, S.I.; Lysenko, V.S.; Tyagulskyy, I.P.; Torbin, V.N.; Omelchuk, V.V.; Nazarova, T.M.; Rebohle, L.; Skorupa, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In this paper, we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way ...
  • Photosensitive in wide spectral region composites based on polyphenylenevinylene 
    Syromyatnikov, V.; Pomaz, I.; Verbitsky, A.; Vertsimakha, Ya.; Nešpůrek, S.; Pochekaylov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Optical and photovoltaic properties of polyphenylenevinylene derivative – poly(2-methoxy-5-(3-,7-dimethyl-octyloxy)-1,4-phenylenevinylene (MDMO-PPV) and its composites with high (40 %) concentration polymethine dyes (PD) ...
  • Testing the optical methods by using the multi-level holographic grating 
    Barchuk, О.I.; Braginets, Y.V.; Klimov, O.S.; Oberemok, Y.A.; Savenkov, S.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In this work the interaction peculiarities of electro-magnetic optical range radiation with gratings’ surfaces are investigated. The multilevel diffractive holographic grating is proposed to be used for the polarization ...
  • Hydrogenic impurity in a bilayer spherical quantum dot 
    Boichuk, V.I.; Bilynskyi, I.V.; Leshko, R.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In the work, on the basis of the exact solution of the Poisson equation for a bilayer quantum dot with a positively charged donor ion in its centre, determined is the potential energy of interaction of this impurity ion ...
  • Influence of initial defects on defect formation process in ion doped silicon 
    Smyntyna, V.A.; Sviridova, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    We study the influence of initial defects in high-resistance epitaxial silicon layers of high-resistance epitaxial silicon structures on defect formation processes at ion boron doping. The method of reverse voltage-capacitance ...
  • Chemical treatment of monocrystalline cadmium telluride and Cd₁₋xMnxTe solid solutions by Н₂О₂–НІ–citric acid etchant compositions 
    Denysyuk, R.O.; Tomashik, V.M.; Tomashik, Z.F.; Chernyuk, O.S.; Grytsiv, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Dissolution of CdTe and Cd₁₋xMnxTe single crystals in aqueous solutions of Н₂О₂–НІ–citric acid system has been studied. The surfaces of equal etching rates were constructed and the limiting stages of the dissolution ...
  • Comparison of electron transport in polar materials for the models of low-density and high-density electron gas. Application to bulk GaN 
    Korotyeyev, V.V.; Syngayivska, G.I.; Kochelap, V.A.; Klimov, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    We analyzed the steady-state electron transport for bulk GaN in frame of two opposite approaches: the electron temperature approach that assumes a high-density electron gas and numerical single-particle Monte-Carlo ...
  • The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors 
    Semchuk, O.Yu.; Gichan, О.І.; Grechko, L.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Studied in this work is the Rahman-Nat diffraction on a thin grating of refractive index in semiconductor, which was created by an interference pattern of two coherent laser beams. Numeral calculations showed that the ...
  • Electron-electron drag in crystals with a multi-valley band. Magnetoresistivity and Hall-effect 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Hall-effect and magnetoresistivity of electrons in multi-valley bands of Si and Ge is considered with due regard for direct intervalley drag. Search of contribution of this drag shows that this interactioin sufficiently ...
  • Photothermal analysis of heterogeneous semiconductor structures under a pulse laser irradiation 
    Burbelo, R.; Isaiev, M.; Kuzmich, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The analysis of photothermal conversion in materials with modified properties of surface layer was made in this work. Influence of both physical and geometrical nonlinearities on the process of heat distribution was estimated.
  • Thin silicon solar cells with SiОх /SiNx Bragg mirror rear surface reflector 
    Ivanov, I.I.; Nychyporuk, T.V.; Skryshevsky, V.A.; Lemiti, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    . Bragg reflectors consisting of sequence of dielectric layers with a quarter wavelengths optical thickness are promising to create solar cells of third generation. SiОх /SiNx Bragg mirror (BM) at the backside of textured ...
  • Effect of macrostructure on the thermoelectric properties of biomorphous SiC/Si ceramics 
    Kiselov, V.S.; Poludin, V.I.; Kiselyuk, M.P.; Kryskov, T.А.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In this work, effect of porous macrostructure on the thermoelectric properties of biomorphous SiC/Si ceramics prepared by the liquid silicon infiltration process has been investigated. Temperature dependences of the ...

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