Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors
Репозиторій DSpace/Manakin
- Домашня сторінка
- →
- Фізико-технічні та математичні науки
- →
- Відділення фізики і астрономії
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12
- →
- Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 4
- →
- Переглянути статтю
JavaScript is disabled for your browser. Some features of this site may not work without it.
The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors
Інший ID:
PACS 75.50.D, 78.20
Посилання:
The Rahman-Nat diffraction on a thin laser-induced grating
of the refractive index in semiconductors/ O.Yu. Semchuk, О.І. Gichan, L.G. Grechko// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 343-348. — Бібліогр.: 15 назв. — англ.
Дата:
2009
Переглядів:
620
Завантажень:
364
The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors
Анотація:
Studied in this work is the Rahman-Nat diffraction on a thin grating of
refractive index in semiconductor, which was created by an interference pattern of two
coherent laser beams. Numeral calculations showed that the maximal diffraction
efficiency for the Rahman-Nat diffraction in the first order was 28.2 % for a purely phase
grating at its thickness z ~ 200, and 4.8 % for a purely amplitude grating. It was also
ascertained, that waves belonging to the nearby diffraction orders differ from each other
by π/2 in their phase.
