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The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 4
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The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors
Інший ID:
PACS 75.50.D, 78.20
Посилання:
The Rahman-Nat diffraction on a thin laser-induced grating
of the refractive index in semiconductors/ O.Yu. Semchuk, О.І. Gichan, L.G. Grechko// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 343-348. — Бібліогр.: 15 назв. — англ.
Дата:
2009
Переглядів:
727
Завантажень:
395
The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors
Анотація:
Studied in this work is the Rahman-Nat diffraction on a thin grating of
refractive index in semiconductor, which was created by an interference pattern of two
coherent laser beams. Numeral calculations showed that the maximal diffraction
efficiency for the Rahman-Nat diffraction in the first order was 28.2 % for a purely phase
grating at its thickness z ~ 200, and 4.8 % for a purely amplitude grating. It was also
ascertained, that waves belonging to the nearby diffraction orders differ from each other
by π/2 in their phase.
