Наукова електронна бібліотека
періодичних видань НАН України

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12 за назвою

Сортувати за: Порядок: Результатів:

  • On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors 
    Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Within the frame of theory of anisotropic scattering, it was studied the relation of values for specific resistance changes under the axial elastic deformations for manyvalley semiconductors, n-Ge and n-Si. The aspect ...
  • Optical and photoluminescent properties of Ag/Al₂O₃ nanocomposite films obtained by pulsed laser deposition 
    Manoilov, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The method of pulsed laser deposition in vacuum from forward and backward particle flows from an erosion torch was used to prepare silver films and Ag/Al₂O₃ nanocomposite films. Measured were transmission and time-resolved ...
  • Optical and photoluminescent properties of nanostructured hybrid films based on functional fullerenes and metal nanoparticles 
    Dmitruk, N.; Borkovskaya, O.; Naumenko, D.; Berezovska, N.; Dmitruk, I.; Meza-Laguna, V.; Alvarez-Zauco, E.; Basiuk, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The chemically cross-linked C₆₀ thin films, capable of binding Ag or Au nanoparticles, were prepared by the gas-phase treatment with diamine for one set of samples and dithiol for another one and decoration with Ag or ...
  • Optical properties of GaSe semiconducting crystals intercalated by CdTe nanoparticles 
    Khalavk, Y.B.; Shcherbak, L.P.; Pyrlya, M.M.; Boledzyuk, V.B.; Kovalyuk, Z.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The transmission spectra of GaSe crystals intercalated by CdTe nanoparticles (NPs) from aqueous colloidal solutions were investigated at 77 K in the range of GaSe excitonic absorption. Solutions of two types – yellow ...
  • Parameters of the energy spectrum for holes in CuInSe₂ 
    Gorley, P.М.; Prokopenko, I.V.; Galochkinа, О.О.; Horley, P.P.; Vorobiev, Yu.V.; González-Hernández, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    This paper reports the coefficients Ca,b for the k-linear term in dispersion relation E(k) for holes of the upper valence bands Г⁻₆ and Г⁺₇ in p-CuInSe₂ crystals. We also obtained the tensor components for the carrier ...
  • Peculiarities of neutron irradiation influence on GaP light-emitting structures 
    Litovchenko, P.; Litovchenko, A.; Konoreva, O.; Opilat, V.; Pinkovska, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    GaP LEDs irradiated by reactor neutrons were studied by optical and electrical methods. The observed emission intensity degradation is related with two factors: 1) radiation fields that destroy bond excitons and 2) ...
  • Perspective of surface modification of CdTe single crystal substrate for creation of photosensitive barrier structures 
    Makhniy, V.P.; Skrypnyk, N.V.; Boyko, Yu.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Analyzed in this paper is the influence of various modifications of substrate surface in n-CdTe single crystals (laser, thermal and photothermal) on electric and photoelectric properties of diode structures based on them.
  • Photoluminescent properties of Al₂O₃ films containing gold nanoparticles, which are prepared by pulse laser deposition 
    Kaganovich, E.B.; Kizyak, I.M.; Kudryavtsev, A.A.; Manoilov, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Photoluminescent porous films of aluminum oxide containing gold nanoparticles were prepared using pulse laser deposition from backward flow of particles from erosion torch. Measurements of time-resolved photoluminescence ...
  • Photosensitive in wide spectral region composites based on polyphenylenevinylene 
    Syromyatnikov, V.; Pomaz, I.; Verbitsky, A.; Vertsimakha, Ya.; Nešpůrek, S.; Pochekaylov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Optical and photovoltaic properties of polyphenylenevinylene derivative – poly(2-methoxy-5-(3-,7-dimethyl-octyloxy)-1,4-phenylenevinylene (MDMO-PPV) and its composites with high (40 %) concentration polymethine dyes (PD) ...
  • Photothermal analysis of heterogeneous semiconductor structures under a pulse laser irradiation 
    Burbelo, R.; Isaiev, M.; Kuzmich, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The analysis of photothermal conversion in materials with modified properties of surface layer was made in this work. Influence of both physical and geometrical nonlinearities on the process of heat distribution was estimated.
  • Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers 
    Rubish, V.M.; Gera, E.B.; Pop, M.M.; Maryan, V.M.; Kostyukevych, S.O.; Moskalenko, N.L.; Semak, D.G.; Kostyukevych, K.V.; Kryuchin, A.A.; Petrov, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The results of investigation of the As₄₀-xSbxS₆₀ (x = 0-10) thin films transmission spectra depending on exposure and heat treatment conditions are given. It was established that illumination and annealing of films leads ...
  • Preparation technology and photoluminescence properties of CdTe nanocrystals in colloidal solutions and polymeric matrices 
    Kalytchuk, S.M.; Korbutyak, D.V.; Scherbak, L.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    An analysis of physical mechanisms responsible for the influence of stabilizer type and ambient material on CdTe nanocrystal growth rate and passivation effectiveness of surface dangling bonds has been carried out. The ...
  • Properties of junction diodes under conditions of bisotropic strains 
    Borblik, V.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In consideration of influence of technological strains on characteristics of junction diodes located on surface of silicon wafers, biaxial character of such strains has taken into account. The cases of (001)- and ...
  • Properties of phase-shifting devices used in researches of nonlinear absorption 
    Kulish, M.R.; Malysh, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    . Formulated in this work are the requirements to the Fresnel rhomb used for light polarization control of high-power lasers. Technical parameters of the rhomb have been given. The calibration procedure of the Fresnel ...
  • Reliability of AC thick-film electroluminescent lamps 
    Vlaskin, V.; Vlaskina, S.; Berezhinsky, L.; Svechnikov, G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The reliability of AC thick-film EL devices has been studied. The AC thickfilm EL devices were fabricated by Novatech Inc. using the industrial print screen technology. The analysis of reasons for failure has been proposed. ...
  • Specific thermoemf and Hall-effect in crystals with monopolar conductivity 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The Seebeck coefficient α and Hall constant RH are calculated for monopolar crystal as based of quantum kinetic equation. It is shown that α and RH in the case of simple isotropic band do not depend on relaxation ...
  • Stacking Faults in the single crystals 
    Mihir M. Vora; Aditya M. Vora (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The single crystals of InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ viz. MoRe₀.₀₅Se₁.₉₉₅, MoRe₀.₀₀₁Se₁.₉₉₉ and Mo₀.₉₉₅Re₀.₀₀₅Se₂ have been grown by a direct vapour transport technique (DVT) in the laboratory. Structural ...
  • Stimulated emission of Cr²⁺ ions in ZnS:Cr thin-film electroluminescent structures 
    Vlasenko, N.A.; Oleksenko, P.F.; Mukhlyo, M.A.; Veligura, L.I.; Denisova, Z.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    First observation of stimulated Cr²⁺ emission in ZnS:Cr electroluminescent (EL) impact-excited thin-film waveguide structures is reported. The structures consist of the following thin films deposited on a glass substrate: ...
  • Structure and electrical properties of In₂Se₃Mn layered crystals 
    Kaminskii, V.M.; Kovalyuk, Z.D.; Zaslonkin, A.V.; Ivanov, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Investigations of the crystalline structure and electrical properties of In₂Se₃ 1 wt. %Mn and In₂Se₃ 6 wt. % Mn crystals have been carried out. We have found formation of a substitutional solid solution for In₂Se₃ 1 ...
  • Synthesis and luminescent properties of SrTiO₃:Pr³⁺ phosphors prepared by sol-gel method 
    Marchylo, O.M.; Zavjalova, L.V.; Nakanishi, Y.; Kominami, H.; Hara, K.; Belyaev, A.E.; Svechnikov, G.S.; Fenenko, L.I.; Poludin, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    New red SrTiO₃:Pr³⁺ phosphor for the field emission displays application was prepared using the sol-gel method. The reaction between starting materials SrCl₂, Ti-(Oi-C₃H₇)₄ and PrCl₃ resulted in a mix of compounds ...

Пошук


Розширений пошук

Перегляд

Мій обліковий запис