Анотація:
GaP LEDs irradiated by reactor neutrons were studied by optical and electrical
methods. The observed emission intensity degradation is related with two factors:
1) radiation fields that destroy bond excitons and 2) decrease in the free charge carrier
concentration, which is caused by their capture by radiation defects. Study of currentvoltage
characteristics at 77 K by highly precession methods has revealed the appearance
of N-shaped negative differential region caused by carrier tunneling onto deep levels in
quantum wells, which might exist in initial and irradiated p-n structures. In some cases,
improvement of current-voltage characteristics after neutron irradiation is observed. An
assumption is made about the radiation-stimulated origin of this effect.