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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12 за назвою

Сортувати за: Порядок: Результатів:

  • Effect of acetone vapor treatment on photoluminescence of porous nc-Si–SiOx nanostructures 
    Indutnyi, I.Z.; Michailovska, K.V.; Min’ko, V.I.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The effect of treatment in saturated acetone vapors on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited SiOx films is studied. As a result of this treatment followed by ...
  • Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures 
    Red’ko, R. R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    We present the results of investigations of the effect caused by low magnetic field treatment on InP single crystals impurity-defect composition. This effect was found when studying the radiative recombination (luminescence) ...
  • Effect of macrostructure on the thermoelectric properties of biomorphous SiC/Si ceramics 
    Kiselov, V.S.; Poludin, V.I.; Kiselyuk, M.P.; Kryskov, T.А.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In this work, effect of porous macrostructure on the thermoelectric properties of biomorphous SiC/Si ceramics prepared by the liquid silicon infiltration process has been investigated. Temperature dependences of the ...
  • Effect of Si infiltration method on the properties of biomorphous SiC 
    Kiselov, V.S.; Kalabukhova, E.N.; Sitnikov, A.A.; Lytvyn, P.M.; Poludin, V.I.; Yukhymchuk, V.O.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Two types of wood-based biomorphous SiC composites with different microstructure were obtained by infiltration of carbon template with liquid or vapour silicon. The oak, pine, lilac, walnut, acacia woods available in ...
  • Effect of the structure of polarimeter characteristic matrix on light polarization measurements 
    Savenkov, S.N.; Oberemok, Ye.A.; Klimov, O.S.; Barchuk, О.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In the paper, we carried out the comparative analysis of three polarimeters among the most usable their variants: (i) Stokes polarimeter based on phenomenological definition of Stokes parameters; (ii) Stokes polarimeter ...
  • Electron-electron drag in crystals with a multi-valley band. Magnetoresistivity and Hall-effect 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Hall-effect and magnetoresistivity of electrons in multi-valley bands of Si and Ge is considered with due regard for direct intervalley drag. Search of contribution of this drag shows that this interactioin sufficiently ...
  • Electron-electron drag in crystals with multivalley band 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Mobility of electrons in multivalley bands of Si and Ge is considered with due regard for intervalley drag. It is shown that drag sufficiently diminishes electron mobility at low temperatures. This effect is clearer ...
  • Electron mobility in CdxHg₁₋xSe 
    Malyk, O.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, ionized impurities in CdxHg₁₋xSe (0 ⩽ x ⩽ 0.547) samples ...
  • Electrophysical properties of SmxPb₁₋xTe solid solutions 
    Hasanov, H.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The electrophysical properties of SmxPb₁₋xTe (x ≤ 0.08) solid solutions have been investigated. The electric conductivity, Hall coefficient and Hall mobility of charge carriers in the temperature range 80 to 800 К have ...
  • Energy loss researches of diamond microgrinded laser mirrors by Fourier optics methods 
    Staschuk, V.S.; Kononchuk, G.L.; Poperenko, L.V.; Stukalenko, V.V.; Filipov, Y.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The diffraction losses of laser mirrors were determined by using specially designed spectrometer of spatial frequencies. Reflection surface (70 mm diameter) was made by diamond microgrinding, but instead of an ideal ...
  • Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions 
    Nazarov, A.N.; Osiyuk, I.N.; Tiagulskyi, S.I.; Lysenko, V.S.; Tyagulskyy, I.P.; Torbin, V.N.; Omelchuk, V.V.; Nazarova, T.M.; Rebohle, L.; Skorupa, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In this paper, we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way ...
  • Fine structure of NQR spectra in GaSe 
    Kovalyuk, Z.D.; Lastivka, G.I.; Khandozhko, О.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Peculiarities of the observation of nuclear quadrupole resonance (NQR) in GaSe crystals grown from melt are under investigations. The splitting of a resonance NQR line by two identical spectra is caused by the availability ...
  • Fullerene and fullerene-aluminum nanostructured films as sensitive layers for gas sensors 
    Grynko, D.; Burlachenko, J.; Kukla, O.; Kruglenko, I.; Belyaev, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The responses of quartz crystal microbalance (QCM) sensors coated by fullerene and fullerene-aluminum films to ethanol and water vapors are investigated. The possibility of controlling the adsorption properties of such ...
  • Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system 
    Halyan, V.V.; Shevchuk, M.V.; Davydyuk, G.Ye.; Voronyuk, S.V.; Kevshyn, A.H.; Bulatetsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    A region of glass formation was found during melt quenching from 1273 K in the AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂. system. It is localized along the binary GeSe₂- GeS₂ system. Characteristic parameters (Tg, Tc, Tm) were determined ...
  • Hydrogenic impurity in a bilayer spherical quantum dot 
    Boichuk, V.I.; Bilynskyi, I.V.; Leshko, R.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In the work, on the basis of the exact solution of the Poisson equation for a bilayer quantum dot with a positively charged donor ion in its centre, determined is the potential energy of interaction of this impurity ion ...
  • Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure 
    Abbasov, Sh.M.; Aghaverdiyeva, G.T.; Ibrahimov, Z.A.; Farajova, U.F.; Ibrahimova, R.A.; Mehdevi, Heyder (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge substrates were investigated. The structural perfection of the films was controlled by electron diffraction, electron microscopic and X-ray ...
  • Influence of initial defects on defect formation process in ion doped silicon 
    Smyntyna, V.A.; Sviridova, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    We study the influence of initial defects in high-resistance epitaxial silicon layers of high-resistance epitaxial silicon structures on defect formation processes at ion boron doping. The method of reverse voltage-capacitance ...
  • Influence of polarization of semiconductor lattice on its optical vibration spectrum 
    Severin, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Considered in this paper are optical spectra of crystal lattice vibrations in semiconductor solid solutions, which have two vibration bands depending on solution composition. It has been shown that this dependence for ...
  • Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz 
    Babych, V.М.; Olikh, Ja.М.; Tymochko, M.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Presented in this paper are experimental results of ultrasound treatment (UST) and dynamic ultrasound loading (USL) influences on the electric activity of radiation defects (after y-irradiation) in crystals n-Si–Fz. The ...
  • Investigation of singularities inherent to Mueller matrix images of biological crystals: diagnostics of their birefringent structure 
    Misevitch, I.Z.; Ushenko, Yu.O.; Pridiy, O.G.; Motrich, A.V.; Tomka, Yu.Ya.; Dubolazov, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In this work, we have theoretically grounded conceptions of singularities observed in coordinate distributions of Mueller matrix elements for a network of human tissue biological crystals. Found is interrelation between ...

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