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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 1 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 1 за назвою

Сортувати за: Порядок: Результатів:

  • Silicon carbide defects and luminescence centers in current heated 6H-SiC 
    Lee, S.W.; Vlaskina, S.I.; Vlaskin, V.I.; Zaharchenko, I.V.; Gubanov, V.A.; Mishinova, G.N.; Svechnikov, G.S.; Rodionov, V.E.; Podlasov, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    At room temperature yellow photoluminescence with a broad peak of 2.13 eV is a well-known feature of boron-doped 6H-SiC. Usually yellow luminescence is regarded as recombination involving both the boron-related deep ...
  • Spin-dependent current in silicon p-n junction diodes 
    Tretyak, O.V.; Kozonushchenko, O.I.; Krivokhizha, K.V.; Revenko, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We have used electrically detected spin-dependent paramagnetic resonance to investigate the non-equilibrium conductivity in a silicon diode. In order to create paramagnetic centers, we used diode with a polished surface ...
  • The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts 
    Belyaev, A.E.; Boltovets, N.S.; Kapitanchuk, L.M.; Konakova, R.V.; Kladko, V.P.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Korostinskaya, T.V.; Ataubaeva, A.B.; Nevolin, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact ...
  • Two-dimensional digital demodulation for optical microscopes with spatial modulation of illumination 
    Borovytsky, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    It is proposed the new technique for the digital demodulation of images with two-dimensional spatial modulation of illumination. This technique is applicable for low contrast modulation with any phases of modulation that ...
  • Ultrasonic assisted nanomanipulations with atomic force microscope 
    Lytvyn, P.M.; Olikh, O.Ya.; Lytvyn, O.S.; Dyachyns’ka, O.M.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Demonstrated experimentally in this work was the possibility of controlled handling the nanoparticles with the size from 50 up to 250 nm on a semiconductor surface by using an atomic force microscope under conditions ...
  • X-ray diffraction study of deformation state in InGaN/GaN multilayered structures 
    Kladko, V.P.; Kuchuk, A.V.; Safryuk, N.V.; Machulin, V.F.; Belyaev, A.E.; Konakova, R.V.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor deposition (MOCVD) method. Deformation conditions in the superlattice ...

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