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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 1 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 1 за назвою

Сортувати за: Порядок: Результатів:

  • Optical transmittance of carbon suspensions in polymer matrixes under powerful pulsed laser irradiation 
    Zelensky, S.E.; Kopyshinsky, O.V.; Garashchenko, V.V.; Kolesnik, A.S.; Stadnytskyi, V.M.; Zelenska, K.S.; Shynkarenko, Ye .V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The effect of optical limiting is investigated in the suspensions of carbon microparticles in aqueous gelatin gel and epoxy resin. Both transient and permanent changes of optical transmittance are observed after the ...
  • Photoluminescent properties of crystalline solid solution Zn₁₋ xMgxSe:Cr²⁺, a new active material for tunable IR lasers 
    Kovalenko, N.O.; Zagoruiko, Yu.A.; Fedorenko, O.O.; Kuzminov, E.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Considered in this work are the luminescent properties of new active material Zn₁₋xMgxSe :Cr²⁺ for tunable IR lasers. Measured in Zn₀.₇₅Mg₀.₂₅Se : Cr²⁺ is the spectrum of IR luminescence excitation, and shown is the ...
  • Radiative recombination in initial and electron-irradiated GaP crystals 
    Hontaruk, O.; Konoreva, O.; Litovchenko, P.; Manzhara, V.; Opilat, V.; Pinkovska, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Photoluminescence of GaP crystals irradiated by 1 MeV electrons was studied at 4.2 K. Samples were prepared using various technologies and doped by Te, Zn, Mg and N. Emission spectra were analyzed as dependent on the ...
  • Silicon carbide defects and luminescence centers in current heated 6H-SiC 
    Lee, S.W.; Vlaskina, S.I.; Vlaskin, V.I.; Zaharchenko, I.V.; Gubanov, V.A.; Mishinova, G.N.; Svechnikov, G.S.; Rodionov, V.E.; Podlasov, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    At room temperature yellow photoluminescence with a broad peak of 2.13 eV is a well-known feature of boron-doped 6H-SiC. Usually yellow luminescence is regarded as recombination involving both the boron-related deep ...
  • Spin-dependent current in silicon p-n junction diodes 
    Tretyak, O.V.; Kozonushchenko, O.I.; Krivokhizha, K.V.; Revenko, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We have used electrically detected spin-dependent paramagnetic resonance to investigate the non-equilibrium conductivity in a silicon diode. In order to create paramagnetic centers, we used diode with a polished surface ...
  • The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts 
    Belyaev, A.E.; Boltovets, N.S.; Kapitanchuk, L.M.; Konakova, R.V.; Kladko, V.P.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Korostinskaya, T.V.; Ataubaeva, A.B.; Nevolin, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact ...
  • Two-dimensional digital demodulation for optical microscopes with spatial modulation of illumination 
    Borovytsky, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    It is proposed the new technique for the digital demodulation of images with two-dimensional spatial modulation of illumination. This technique is applicable for low contrast modulation with any phases of modulation that ...
  • Ultrasonic assisted nanomanipulations with atomic force microscope 
    Lytvyn, P.M.; Olikh, O.Ya.; Lytvyn, O.S.; Dyachyns’ka, O.M.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Demonstrated experimentally in this work was the possibility of controlled handling the nanoparticles with the size from 50 up to 250 nm on a semiconductor surface by using an atomic force microscope under conditions ...
  • X-ray diffraction study of deformation state in InGaN/GaN multilayered structures 
    Kladko, V.P.; Kuchuk, A.V.; Safryuk, N.V.; Machulin, V.F.; Belyaev, A.E.; Konakova, R.V.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor deposition (MOCVD) method. Deformation conditions in the superlattice ...

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