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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 4 за назвою

Сортувати за: Порядок: Результатів:

  • Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities 
    Ignatyeva, Т.А. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The investigation shows that the specific conductivity of Mo sharply decreases exponentially under the temperature influence within the range from ~20 to ~60 K or under the Re impurity influence in the concentration ...
  • Photochromic properties of composite films of thermally irreversible diarylethenes and fulgimides in polytetrafluoroethylene matrix 
    Kobeleva, O.I.; Valova, T.M.; Ait, A.O.; Barachevsky, V.A.; Grytsenko, K.P.; Machulin, V.F.; Krayushkin, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Photochromic polymeric thin films have been prepared by vacuum codeposition of polytetrafluoroethylene (PTFE) and thermally irreversible photochromic compounds: the cyclopentene derivative of diarylethene and fulgimide. ...
  • Seebeck’s effect in p-SiGe whisker samples 
    Dolgolenko, A.P.; Druzhinin, A.A.; Karpenko, A.Ya.; Nichkalo, S.I.; Ostrovsky, I.P.; Litovchenko, P.G.; Litovchenko, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    p-SiGe whisker samples with a diameter of ~40 μm, grown by chemical precipitation from the vapor phase, have been investigated. Temperature dependences of the thermal e.m.f. and conductivity within the temperature interval ...
  • Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes 
    Belyaev, A.E.; Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Sorokin, V.M.; Sheremet, V.N.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Some aspects of measuring the thermal resistance to a constant heat flow at a p-n junction–package region in IMPATT and light-emitting diodes are considered. We propose a method of studying the thermal resistance of ...
  • Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field 
    Vladimirova, T.P.; Kyslovs’kyy, Ye.M.; Molodkin, V.B.; Olikhovskii, S.I.; Koplak, O.V.; Kochelab, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Quantitative characterization of complex microdefect structures in annealed silicon crystals (1150 °С, 40 h) and their transformations after exposing for one day in a weak magnetic field (1 T) has been performed by ...
  • Tunneling current via dislocations in InAs and InSb infrared photodiodes 
    Sukach, A.V.; Tetyorkin, V.V.; Krolevec, N.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Carrier transport mechanisms are investigated in InAs and InSb infrared photodiodes. The photodiodes were prepared by thermal diffusion of Cd and ion implantation of Be into InAs and InSb single-crystal substrates of ...

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