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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14 за назвою

Сортувати за: Порядок: Результатів:

  • Role of Sb additive in the dielectric properties of f Se₉₀In₁₀ and Se₇₅In₂₅ glassy alloys 
    Sharma, J.; Kumar, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    In this paper, we report the effect of Sb additive on dielectric properties of two binary − InSe glassy systems, comparing the properties of a- Se₉₀In₁₀ a- Se₇₅In₂₅ and a Se₇₅In₂₅Sb₁₅ glassy alloys. The temperature and ...
  • Seebeck’s effect in p-SiGe whisker samples 
    Dolgolenko, A.P.; Druzhinin, A.A.; Karpenko, A.Ya.; Nichkalo, S.I.; Ostrovsky, I.P.; Litovchenko, P.G.; Litovchenko, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    p-SiGe whisker samples with a diameter of ~40 μm, grown by chemical precipitation from the vapor phase, have been investigated. Temperature dependences of the thermal e.m.f. and conductivity within the temperature interval ...
  • Sensors for fire gas detectors 
    Kozubovsky, V.R.; Kormosh, V.V.; Alyakshev, I.P.; Lishchenko, N.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Considered in this paper are the possibilities to reduce energy consumption in semiconductor gas sensors with the purpose of their application in multichannel fire gas detectors and gas alarms with an independent power supply.
  • Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals 
    Katerynchuk, V.M.; Kovalyuk, Z.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    It has been shown that a result of InSe crystal oxidation is formation of an intrinsic oxide film that has not insulating but conductive properties. This conductive film forms a potential barrier with the semiconductor ...
  • Simple method for SiC nanowires fabrication 
    Kiselov, V.S.; Lytvyn, O.S.; Yukhymchuk, V.O.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source ...
  • Simulated properties of printed antennas on silicon substrates for THz/sub-THz arrays 
    Sakhno, M.V.; Gumenjuk-Sichevska, J.V.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Some properties of printed antennas and arrays for uncooled silicon plasmon detector arrays based on field effect transistors are shortly discussed. Antenna geometry has been optimised for maximising gain at 300 GHz. It ...
  • Singular analysis of Jones-matrix images describing polycrystalline networks of biological crystals in diagnostics of cholelithiasis in its latent period 
    Balanetska, V.O.; Marchuk, Yu.; Karachevtsev, A.V.; Ushenko, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Determined in this work are analytical interrelations between orientations of optical axes and birefringence of biological crystals and characteristic values of Jonesmatrix elements corresponding to flat layers of ...
  • Size effects in p-PbTe nanostructures on polyamide 
    Freik, D.M.; Yurchyshyn, I.K.; Potyak, V.Yu.; Lysiuk, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The thickness dependences of the thermoelectric parameters were observed at room temperature for nanostructures p-PbTe, grown from the vapor phase on polyamide film substrates. An attempt to explain detected dependences ...
  • Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes 
    Belyaev, A.E.; Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Sorokin, V.M.; Sheremet, V.N.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Some aspects of measuring the thermal resistance to a constant heat flow at a p-n junction–package region in IMPATT and light-emitting diodes are considered. We propose a method of studying the thermal resistance of ...
  • Structural and optical characteristics of ZnSe and CdSe films condensed on non-oriented substrates 
    Ivashchenko, M.M.; Opanasyuk, A.S.; Opanasyuk, N.M.; Danilchenko, S.M.; Starikov, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    In this work, the complex investigation of structural and optical properties of zinc and cadmium selenide semiconductor films deposited by close-spaced vacuum sublimation method using thermal evaporation on non-oriented ...
  • Structural properties of nanocomposite SiO₂(Si) films obtained by ion-plasma sputtering and thermal annealing 
    Bratus, O.L.; Evtukh, A.A.; Lytvyn, O.S.; Voitovych, M.V.; Yukhymchuk, V.О. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The nanocomposite SiO₂(Si) films containing Si nanoclusters inside insulating SiO₂matrix are promising for many nanoelectronics applications. The ion-plasma sputtering of Si in O₂ containing gas mixture and following thermal ...
  • Study of nanoporous in humidity-sensitive MgAl₂O₄ ceramics with positron annihilation lifetime spectroscopy 
    Klym, H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    It has been shown that positron annihilation lifetime spectroscopy is a quite promising tool for nanostructural characterization of humidity-sensitive spinel-type MgAl₂O₄ceramics. The results have been achieved using ...
  • The electric field gradient asymmetry parameter in InSe 
    Kovalyuk, Z.D.; Khandozhko, A.G.; Lastivka, G.I.; Samila, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The complex NQR spectra of ¹¹⁵In caused by presence of structural defects called polytypes are observed in a monocrystalline InSe sample. Multiple ratio of average frequencies of NQR spectra that correspond to four ...
  • The kinetic of point defect transformation during the annealing process in electron-irradiated silicon 
    Gaidar, G.P.; Dolgolenko, A.P.; Litovchenko, P.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The A-centers (VO) annealing and transformation of precursors to form stable СiОi defects during these processes are described. It was found the necessity to take into account annihilation of vacancy type defects with ...
  • The new approach to identification of film reflecting holographic marks 
    Kostyukevych, S.O.; Muravsky, L.I.; Fitio, V.M.; Voronyak, T.I.; Shepeliavyi, P.E.; Kostyukevych, K.V.; Moskalenko, N.L.; Pogoda, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The new approach for creation of film reflecting holographic marks for optical security is proposed. Such marks are replicas of a reflecting master hologram recorded on a chalcogenide glass layer. To receive the master ...
  • The role of copper in bifacial CdTe based solar cells 
    Khrypunov, G.; Meriuts, A.; Shelest, T.; Deineko, N.; Klyui, N.; Avksentyeva, L.; Gorbulik, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    We present an innovative back contact for CdTe solar cell by the application of a transparent conducting oxide, typically ITO, as a back electrical contact on CdTe/CdS photovoltaic devices that acts as a free-Cu stable ...
  • Thin films CdS/CdTe solar cells with different activation processes base layer 
    Khrypunov, G.S.; Shelest, T.N.; Li, T.N.; Meriuts, A.V.; Kovtun, N.A.; Makarov, A.V.; Avksentyeva, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Shown in this work is the possibility to create industrial technology for production of solar cells FTO/CdS/CdTe. The technology includes annealing in freon processing step for activation of cadmium telluride base layers ...
  • Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field 
    Vladimirova, T.P.; Kyslovs’kyy, Ye.M.; Molodkin, V.B.; Olikhovskii, S.I.; Koplak, O.V.; Kochelab, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Quantitative characterization of complex microdefect structures in annealed silicon crystals (1150 °С, 40 h) and their transformations after exposing for one day in a weak magnetic field (1 T) has been performed by ...
  • Tunneling current via dislocations in InAs and InSb infrared photodiodes 
    Sukach, A.V.; Tetyorkin, V.V.; Krolevec, N.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Carrier transport mechanisms are investigated in InAs and InSb infrared photodiodes. The photodiodes were prepared by thermal diffusion of Cd and ion implantation of Be into InAs and InSb single-crystal substrates of ...
  • Wavelet analysis of Jones-matrix images corresponding to polycrystalline networks of biological crystals in diagnostics of tuberculosis 
    Zabolotna, N.I.; Balanetska, V.O.; Telenga, O.Yu.; Ushenko, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Determined in this work are analytical interrelations between orientations of optical axes and birefringence of biological crystals as well as characteristic values of elements in the Jones matrix for flat layers of ...

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