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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14 за назвою

Сортувати за: Порядок: Результатів:

  • Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities 
    Ignatyeva, Т.А. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The investigation shows that the specific conductivity of Mo sharply decreases exponentially under the temperature influence within the range from ~20 to ~60 K or under the Re impurity influence in the concentration ...
  • Photochromic properties of composite films of thermally irreversible diarylethenes and fulgimides in polytetrafluoroethylene matrix 
    Kobeleva, O.I.; Valova, T.M.; Ait, A.O.; Barachevsky, V.A.; Grytsenko, K.P.; Machulin, V.F.; Krayushkin, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Photochromic polymeric thin films have been prepared by vacuum codeposition of polytetrafluoroethylene (PTFE) and thermally irreversible photochromic compounds: the cyclopentene derivative of diarylethene and fulgimide. ...
  • Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals 
    Taghiyev, T.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The effect of γ-radiation with Е = 1.3 MeV energy and Dγ = 10…200 krad dose on photoconductivity and photoluminescence features of GaS₀.₇₅Se₀.₂₅‹Er› single crystals was studied. When analyzing the experimental data it ...
  • Photoemission study of the electronic structure of praseodymium filled skutterudite (PrOs₄Sb₁₂) 
    Akinlami, J.O.; Awobode, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Here we report the electronic structure of praseodymium filled skutterudite compound PrOs₄Sb₁₂. The theoretical photoemission spectrum (PES) at ћω = 21.2 eV shows four distinct structures peaking at about –0.2, –7.7, –13.7 ...
  • Photo-thermo-acoustic analysis of heterogeneous semiconductor structures under pulse laser irradiation 
    Burbelo, R.; Isaiev, M.; Kuzmich, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The analysis of photo-thermo-acoustic transformation in materials with the modified properties of a surface layer has been made in this work. Formation of a photoacoustic response in a layered structure of the type ...
  • Polarization conversion effect in obliquely deposited SiOx films 
    Sopinskyy, M.V.; Indutnyi, I.Z.; Michailovska, K.V.; Shepeliavyi, P.E.; Tkach, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Structural anisotropy of the SiOx films and nc-Si-SiOx light emitting nanostructures, prepared by oblique deposition of silicon monoxide in vacuum, has been studied using the polarization conversion (PC) effect. For this ...
  • Probing plasmonic system by the simultaneous measurement of Raman and fluorescence signals of dye molecules 
    Dvoynenko, M.M.; Kazantseva, Z.I.; Strelchuk, V.V.; Kolomys, O.F.; Bortshagovsky, E.G.; Venger, E.F.; Tronc, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The simultaneous measurement of Raman and fluorescence signals was proposed to find out the molecule-metal distance. The ratio between Raman and fluorescence intensities was used to estimate molecule-metal distance in ...
  • Role of Sb additive in the dielectric properties of f Se₉₀In₁₀ and Se₇₅In₂₅ glassy alloys 
    Sharma, J.; Kumar, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    In this paper, we report the effect of Sb additive on dielectric properties of two binary − InSe glassy systems, comparing the properties of a- Se₉₀In₁₀ a- Se₇₅In₂₅ and a Se₇₅In₂₅Sb₁₅ glassy alloys. The temperature and ...
  • Seebeck’s effect in p-SiGe whisker samples 
    Dolgolenko, A.P.; Druzhinin, A.A.; Karpenko, A.Ya.; Nichkalo, S.I.; Ostrovsky, I.P.; Litovchenko, P.G.; Litovchenko, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    p-SiGe whisker samples with a diameter of ~40 μm, grown by chemical precipitation from the vapor phase, have been investigated. Temperature dependences of the thermal e.m.f. and conductivity within the temperature interval ...
  • Sensors for fire gas detectors 
    Kozubovsky, V.R.; Kormosh, V.V.; Alyakshev, I.P.; Lishchenko, N.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Considered in this paper are the possibilities to reduce energy consumption in semiconductor gas sensors with the purpose of their application in multichannel fire gas detectors and gas alarms with an independent power supply.
  • Sheet resistance and surface topology time dynamics of intrinsic oxide film on InSe crystals 
    Katerynchuk, V.M.; Kovalyuk, Z.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    It has been shown that a result of InSe crystal oxidation is formation of an intrinsic oxide film that has not insulating but conductive properties. This conductive film forms a potential barrier with the semiconductor ...
  • Simple method for SiC nanowires fabrication 
    Kiselov, V.S.; Lytvyn, O.S.; Yukhymchuk, V.O.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source ...
  • Simulated properties of printed antennas on silicon substrates for THz/sub-THz arrays 
    Sakhno, M.V.; Gumenjuk-Sichevska, J.V.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Some properties of printed antennas and arrays for uncooled silicon plasmon detector arrays based on field effect transistors are shortly discussed. Antenna geometry has been optimised for maximising gain at 300 GHz. It ...
  • Singular analysis of Jones-matrix images describing polycrystalline networks of biological crystals in diagnostics of cholelithiasis in its latent period 
    Balanetska, V.O.; Marchuk, Yu.; Karachevtsev, A.V.; Ushenko, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Determined in this work are analytical interrelations between orientations of optical axes and birefringence of biological crystals and characteristic values of Jonesmatrix elements corresponding to flat layers of ...
  • Size effects in p-PbTe nanostructures on polyamide 
    Freik, D.M.; Yurchyshyn, I.K.; Potyak, V.Yu.; Lysiuk, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The thickness dependences of the thermoelectric parameters were observed at room temperature for nanostructures p-PbTe, grown from the vapor phase on polyamide film substrates. An attempt to explain detected dependences ...
  • Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes 
    Belyaev, A.E.; Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Sorokin, V.M.; Sheremet, V.N.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Some aspects of measuring the thermal resistance to a constant heat flow at a p-n junction–package region in IMPATT and light-emitting diodes are considered. We propose a method of studying the thermal resistance of ...
  • Structural and optical characteristics of ZnSe and CdSe films condensed on non-oriented substrates 
    Ivashchenko, M.M.; Opanasyuk, A.S.; Opanasyuk, N.M.; Danilchenko, S.M.; Starikov, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    In this work, the complex investigation of structural and optical properties of zinc and cadmium selenide semiconductor films deposited by close-spaced vacuum sublimation method using thermal evaporation on non-oriented ...
  • Structural properties of nanocomposite SiO₂(Si) films obtained by ion-plasma sputtering and thermal annealing 
    Bratus, O.L.; Evtukh, A.A.; Lytvyn, O.S.; Voitovych, M.V.; Yukhymchuk, V.О. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The nanocomposite SiO₂(Si) films containing Si nanoclusters inside insulating SiO₂matrix are promising for many nanoelectronics applications. The ion-plasma sputtering of Si in O₂ containing gas mixture and following thermal ...
  • Study of nanoporous in humidity-sensitive MgAl₂O₄ ceramics with positron annihilation lifetime spectroscopy 
    Klym, H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    It has been shown that positron annihilation lifetime spectroscopy is a quite promising tool for nanostructural characterization of humidity-sensitive spinel-type MgAl₂O₄ceramics. The results have been achieved using ...
  • The electric field gradient asymmetry parameter in InSe 
    Kovalyuk, Z.D.; Khandozhko, A.G.; Lastivka, G.I.; Samila, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The complex NQR spectra of ¹¹⁵In caused by presence of structural defects called polytypes are observed in a monocrystalline InSe sample. Multiple ratio of average frequencies of NQR spectra that correspond to four ...

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