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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18 за назвою

Сортувати за: Порядок: Результатів:

  • About self-activated orange emission in ZnO 
    Markevich, I.V.; Stara, T.R.; Bondarenko, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Nominally undoped ZnO ceramics were sintered in air and N₂ flow at 1000 °C. Room temperature photoluminescence (PL) spectra of the samples were measured and analyzed using Gaussian fitting. The self-activated orange PL ...
  • About self-activated orange emission in ZnO 
    Markevich, I.V.; Stara, T.R.; Bondarenko, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Nominally undoped ZnO ceramics were sintered in air and N₂ flow at 1000 °C. Room temperature photoluminescence (PL) spectra of the samples were measured and analyzed using Gaussian fitting. The self-activated orange PL ...
  • Analysis of conditions for synthesis of CdS:Mn nanoparticles 
    Kovalchuk, A.O.; Rudko, G.Yu.; Fediv, V.I.; Gule, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The detailed analysis of the synthesis of CdS:Mn nanoparticles in polyvinyl alcohol polymeric matrix is presented and the ranges of optimal growth parameters are determined. The estimated values of parameters were used to ...
  • Analysis of random events in physical and chemical processes flowing in materials of semiconductor products under external influences and thermal aging 
    Milenin, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    It has been proposed to consider physical and chemical processes in materials of semiconductor products under external influences and thermal aging as flows of the random events. The mathematical analysis of random events ...
  • Analysis of the fundamental absorption edge of the films obtained from the C₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it 
    Kolyadina, E.Yu.; Matveeva, L.A.; Neluba, P.L.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Nanostructures with fullerene C₆₀ were obtained using vacuum sublimation thermal C₆₀ fullerene powder onto unheated substrates made of silicon, mica, silica and coverslip glass. The effect of the structure, composition and ...
  • Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix 
    Azhniuk, Yu.M.; Gomonnai, A.V.; Gomonnai, O.O.; Hasynets, S.M.; Kováč, F.; Lopushansky, V.V.; Petryshynets, I.; Rubish, V.M.; Zahn, D.R.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Sn–As–P–S glasses were obtained using co-melting of pre-synthesized As₂S₃ and Sn₂P₂S₆. Their structure and composition were confirmed by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, ...
  • Au/GaAs photovoltaic structures with single-wall carbon nanotubes on the microrelief interface 
    Dmitruk, N.L.; Borkovskaya, O.Yu.; Mamykin, S.V.; Havrylenko, T.S.; Mamontova, I.B.; Kotova, N.V.; Basiuk, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The effect of single-wall carbon nanotubes nanolayer on photoelectric properties of Au/n-GaAs photovoltaic structure with a microrelief interface has been investigated. Microrelief interfaces of dendrite-like and quasi-grating ...
  • Azimuthally invariant laser polarimetry of polycrystalline smears of biological liquids 
    Ushenko, Yu.O.; Dubolazov, O.V.; Motrich, A.V.; Bodnar, G.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The model based on Mueller-matrix description of mechanisms providing optical anisotropy typical for polycrystalline smears of liquor (including optical activity, birefringence as well as linear and circular dichroism) has ...
  • Azimuthally invariant laser polarimetry of polycrystalline smears of biological liquids 
    Ushenko, Yu.O.; Dubolazov, O.V.; Motrich, A.V.; Bodnar, G.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The model based on Mueller-matrix description of mechanisms providing optical anisotropy typical for polycrystalline smears of liquor (including optical activity, birefringence as well as linear and circular dichroism) has ...
  • Azimuthally invariant phase tomography of optically anisotropic sections of biological tissues 
    Sidor, M.I.; Karachevtsev, A.O.; Prysyazhnyuk, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Considered in this work is the theoretical background of the azimuthally stable method of Jones matrix mapping applied to histological sections of uterine neck biopsy based on spatial-frequency selection of the mechanisms ...
  • Azimuthally invariant phase tomography of optically anisotropic sections of biological tissues 
    Sidor, M.I.; Karachevtsev, A.O.; Prysyazhnyuk, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Considered in this work is the theoretical background of the azimuthally stable method of Jones matrix mapping applied to histological sections of uterine neck biopsy based on spatial-frequency selection of the mechanisms ...
  • Carrier transport mechanisms in reverse biased InSb p-n junctions 
    Sukach, A.V.; Tetyorkin, V.V.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Carrier transport mechanisms have been investigated in linearly graded InSb p-n junctions prepared using thermal diffusion of Cd into single crystal substrates of ntype conductivity. The investigations were focused on the ...
  • Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings 
    Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Features of changes in the electrophysical parameters (concentrations of charge carriers ne and their mobilities μ ) in heavily doped n-Ge <As> single crystals, which occur as a result of the series of thermoannealings ...
  • Characterization of grain boundaries in CdTe polycrystalline films 
    Tetyorkin, V.V.; Sukach, A.V.; Boiko, V.A.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    CdTe polycrystalline films with the average size of grains within the range 10…360 μm were grown on sapphire substrates by using the modified close-spaced sublimation technique. Transverse (across the film) and lateral ...
  • Color mixing models for smart lighting systems based on RGBW and WW LEDs 
    Kornaga, V.I.; Sorokin, V.M.; Rybalochka, A.V.; Oliinyk, O.S.; Kornaga, N.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Color mixing models to obtain white light with a predetermined values of correlated color temperature and brightness are presented. One model describes mathematical algorithm for combination of spectra for WW LEDs lighting ...
  • Composition and concentration dependences of electron mobility in semi-metal Hg₁₋xCdxTe quantum wells 
    Melezhik, E.O.; Gumenjuk-Sichevsk, J.V.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Modeled in this work is the electron mobility in the n-type Hg⁰.³²Cd⁰.⁶⁸Te/Hg₁₋xCdxTe/Hg⁰.³²Cd⁰.⁶⁸Te quantum well being in the semi-metal state at T = 77 K. Calculations take into account longitudinal polar optical phonon ...
  • Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons 
    Konoreva, O.V.; Lytovchenko, M.V.; Malyi, Ye.V.; Petrenko, I.V.; Pinkovska, M.B.; Tartachnyk, V.P.; Shlapatska, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The study of electrical and optical characteristics of GaP LEDs irradiated with electrons (E = 2 MeV, Ф = 0…10¹⁵ cm⁻²) was performed. Especial interest was focused on appearing of S-type instability in current-voltage ...
  • Dependence of the collision integral on electric field 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Conductivity of charged band carriers is considered for the case when collision integral evidently depends on electric field. This dependence for the case of scattering by charged impurities results in decrease of carrier ...
  • Dependence of the collision integral on electric field 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Conductivity of charged band carriers is considered for the case when collision integral evidently depends on electric field. This dependence for the case of scattering by charged impurities results in decrease of carrier ...
  • Design of optical components for terahertz/sub-terahertz imaging systems 
    Shevchik-Shekera, A.V.; Dukhnin, S.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The possibility of using the lenses with an aspherical surface for terahertz/sub-terahertz (THz/sub-THz) imaging systems has been considered. Diffraction-limited optical system of four identical plano-convex aspheric lenses ...

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