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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18 за назвою

Сортувати за: Порядок: Результатів:

  • Carrier transport mechanisms in reverse biased InSb p-n junctions 
    Sukach, A.V.; Tetyorkin, V.V.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Carrier transport mechanisms have been investigated in linearly graded InSb p-n junctions prepared using thermal diffusion of Cd into single crystal substrates of ntype conductivity. The investigations were focused on the ...
  • Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings 
    Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Features of changes in the electrophysical parameters (concentrations of charge carriers ne and their mobilities μ ) in heavily doped n-Ge <As> single crystals, which occur as a result of the series of thermoannealings ...
  • Characterization of grain boundaries in CdTe polycrystalline films 
    Tetyorkin, V.V.; Sukach, A.V.; Boiko, V.A.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    CdTe polycrystalline films with the average size of grains within the range 10…360 μm were grown on sapphire substrates by using the modified close-spaced sublimation technique. Transverse (across the film) and lateral ...
  • Color mixing models for smart lighting systems based on RGBW and WW LEDs 
    Kornaga, V.I.; Sorokin, V.M.; Rybalochka, A.V.; Oliinyk, O.S.; Kornaga, N.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Color mixing models to obtain white light with a predetermined values of correlated color temperature and brightness are presented. One model describes mathematical algorithm for combination of spectra for WW LEDs lighting ...
  • Composition and concentration dependences of electron mobility in semi-metal Hg₁₋xCdxTe quantum wells 
    Melezhik, E.O.; Gumenjuk-Sichevsk, J.V.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Modeled in this work is the electron mobility in the n-type Hg⁰.³²Cd⁰.⁶⁸Te/Hg₁₋xCdxTe/Hg⁰.³²Cd⁰.⁶⁸Te quantum well being in the semi-metal state at T = 77 K. Calculations take into account longitudinal polar optical phonon ...
  • Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons 
    Konoreva, O.V.; Lytovchenko, M.V.; Malyi, Ye.V.; Petrenko, I.V.; Pinkovska, M.B.; Tartachnyk, V.P.; Shlapatska, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The study of electrical and optical characteristics of GaP LEDs irradiated with electrons (E = 2 MeV, Ф = 0…10¹⁵ cm⁻²) was performed. Especial interest was focused on appearing of S-type instability in current-voltage ...
  • Dependence of the collision integral on electric field 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Conductivity of charged band carriers is considered for the case when collision integral evidently depends on electric field. This dependence for the case of scattering by charged impurities results in decrease of carrier ...
  • Dependence of the collision integral on electric field 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Conductivity of charged band carriers is considered for the case when collision integral evidently depends on electric field. This dependence for the case of scattering by charged impurities results in decrease of carrier ...
  • Design of optical components for terahertz/sub-terahertz imaging systems 
    Shevchik-Shekera, A.V.; Dukhnin, S.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The possibility of using the lenses with an aspherical surface for terahertz/sub-terahertz (THz/sub-THz) imaging systems has been considered. Diffraction-limited optical system of four identical plano-convex aspheric lenses ...
  • Determination of the spectral dependence for the absorption coefficient of phosphor inorganic microparticles 
    Khmil’, D.N.; Kamuz, A.M.; Oleksenko, P.F.; Kamuz, V.G.; Aleksenko, N.G.; Kamuz, O.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Developed in the work has been the mathematical model of the composite film, which enables to calculate the wavelength dependence of the absorption coefficient of microcrystals in the phosphor composition. Also, developed ...
  • Development of modeling methods and algorithm for calculating the current-voltage characteristics of LED modules 
    Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Current-voltage characteristics of real high-power LED chips and their defects were studied. Process of modeling LED matrix by using Monte Carlo method based on the measured real LED chips was considered and performed. It ...
  • Development of modeling methods and algorithm for calculating the current-voltage characteristics of LED modules 
    Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Current-voltage characteristics of real high-power LED chips and their defects were studied. Process of modeling LED matrix by using Monte Carlo method based on the measured real LED chips was considered and performed. It ...
  • Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods 
    Stanetska, А.S.; Tomashyk, V.N.; Stratiychuk, І.B.; Tomashyk, Z.F.; Kravetskyy, M.Yu.; Galkin, S.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The process of cutting, mechanical and chemical treatment of the undoped and doped ZnSe crystal surface has been studied. The chemical interaction of zinc selenide surface with bromine emerging solutions of H₂O₂ – HBr and ...
  • Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power 
    Myroniuk, D.V.; Ievtushenko, A.I.; Lashkarev, G.V.; Maslyuk, V.T.; Timofeeva, I.I.; Baturin, V.A.; Karpenko, O.Yu.; Kuznetsov, V.M.; Dranchuk, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Transparent conductive oxide thin films of Al-doped ZnO grown by rf magnetron sputtering were irradiated with high energy electrons with the energy 12.6 MeV and fluence 5·10¹⁴ e/cm². The films were produced using different ...
  • Effect of heating rate on oxidation process of fine-dispersed ZnS:Mn obtained by SHS 
    Bacherikov, Yu.Yu.; Zhuk, A.G.; Okhrimenko, O.B.; Kardashov, D.L.; Kozitskiy, S.V.; Kidalov, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The influence of annealing at 350 °C in air atmosphere on the luminescent characteristics of powdered ZnS: Mn obtained by self-propagating high-temperature synthesis has been studied. It was shown that variation in material ...
  • Effect of heating rate on oxidation process of fine-dispersed ZnS:Mn obtained by SHS 
    Bacherikov, Yu.Yu.; Zhuk, A.G.; Okhrimenko, O.B.; Kardashov, D.L.; Kozitskiy, S.V.; Kidalov, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The influence of annealing at 350 °C in air atmosphere on the luminescent characteristics of powdered ZnS: Mn obtained by self-propagating high-temperature synthesis has been studied. It was shown that variation in material ...
  • Electroluminescence powdered ZnS:Cu obtained by one-stage synthesis 
    Bacherikov, Yu.Yu.; Zhuk, A.G.; Okhrimenko, O.B.; Kardashov, D.L.; Kozitskiy, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Photo- and electroluminescence properties of ZnS obtained using selfpropagating high-temperature synthesis and doped with Cu were studied in this work. It has been shown that high-temperature one-stage synthesis enables ...
  • Electronic structure of PbSnS₃ and PbGeS₃ semiconductor compounds with the mixed cation coordination 
    Bletskan, M.M.; Bletskan, D.I.; Kabatsii, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The self-consistent band structure calculation of PbSnS₃ and PbGeS₃ ternary compounds with the mixed cation coordination was performed using the ab initio density functional theory method. It has been found that both ...
  • Electron transport in crossed electric and magnetic fields under the condition of the electron streaming in GaN 
    Syngayivska, G.I.; Korotyeyev, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    High-field electron transport has been studied in crossed electric and magnetic fields in bulk GaN with doping of 10¹⁶ cm⁻³ and compensation around 90% at the low lattice temperature (30 K). The electron distribution ...
  • Electro-optical effects in 2D macroporous silicon structures with nanocoatings 
    Karachevtseva, L.A.; Lytvynenko, O.O.; Konin, K.P.; Parshyn, K.A.; Sapelnikova, O.Yuю; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The near-IR light absorption oscillations in 2D macroporous silicon structures with microporous silicon layers, CdTe, surface nanocrystals and SiO₂ nanocoatings have been investigated. The electro-optical effect was taken ...

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