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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18 за назвою

Сортувати за: Порядок: Результатів:

  • Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP 
    Belyaev, A.E.; Boltovets, N.A.; Bobyl, A.B.; Kladko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Nasyrov, M.U.; Sachenko, A.V.; Slipokurov, V.S.; Slepova, A.S.; Safryuk, N.V.; Gudymenko, A.I.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n⁺-InP and Au–Ti–Ge–Pd-n⁺-InP prepared ...
  • Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique 
    Shapovalov, A.P.; Korotash, I.V.; Rudenko, E.M.; Sizov, F.F.; Dubyna, D.S.; Osipov, L.S.; Polotskiy, D.Yu.; Tsybrii, Z.F.; Korchovyi, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF ...
  • Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique 
    Shapovalov, A.P.; Korotash, I.V.; Rudenko, E.M.; Sizov, F.F.; Dubyna, D.S.; Osipov, L.S.; Polotskiy, D.Yu.; Tsybri, Z.F.; Korchovyi, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF ...
  • Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    In this work, the results of investigations of DLi spectra in α-SiC crystals and films with a low impurity concentration have been presented. Photoluminescence spectra of lightly doped SiC single crystals and films with ...
  • Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    In this work, the results of investigations of DLi spectra in α-SiC crystals and films with a low impurity concentration have been presented. Photoluminescence spectra of lightly doped SiC single crystals and films with ...
  • Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs 
    Golenkov, A.G.; Zhuravlev, K.S.; Gumenjuk-Sichevska, J.V.; Lysiuk, I.O.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise ...
  • Superluminescent laser-integrated nanocarbonized matrix pumping the neodymium lasers YAG:Nd 
    Onachenko, M.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Forming of surface nanocarbonized structures on substrate, it is possible to reduce the series resistance of nanoregions contacts in heterostructures. It was achieved by increasing the efficiency and output power in ...
  • Surface polariton excitation in ZnO films deposited using ALD 
    Venger, E.F.; Melnichuk, L.Yu.; Melnichuk, A.V.; Semikina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The conductive ZnO films deposited using atomic layer deposition (ALD) on the optical glass substrates were studied using the modified method of the disturbed total internal reflection within the range 400…1400 cm⁻¹ for ...
  • Temperature changes in the excitonic absorption band in flat double nanoheterostructures GaAs/AlxGa₁₋xAs 
    Kondryuk, D.V.; Derevyanchuk, A.V.; Kramar, V.M.; Kudryavtsev, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Adduced in this paper are the method and results of theoretical studying the effects of spatial confinement and exciton-phonon interaction on the position and shape of the excitonic absorption band in flat double ...
  • Temperature changes in the excitonic absorption band in flat double nanoheterostructures GaAs/AlxGa₁₋xAs 
    Kondryuk, D.V.; Derevyanchuk, A.V.; Kramar, V.M.; Kudryavtsev, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Adduced in this paper are the method and results of theoretical studying the effects of spatial confinement and exciton-phonon interaction on the position and shape of the excitonic absorption band in flat double ...
  • Temperature studies of optical parameters in (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films 
    Studenyak, I.P.; Kutsyk, M.M.; Rati, Y.Y.; Izai, V.Yu.; Kökényesi, S.; Daróci, L.; Bohdan, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films were deposited onto a silica substrate by using rapid thermal evaporation. The surfaces of the films were covered with Ag-rich crystalline micrometer-sized cones. The optical transmission ...
  • Temperature studies of optical parameters in (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films 
    Studenyak, I.P.; Kutsyk, M.M.; Rati, Y.Y.; Izai, V.Yu.; Kökényesi, S.; Daróci, L.; Bohdan, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films were deposited onto a silica substrate by using rapid thermal evaporation. The surfaces of the films were covered with Ag-rich crystalline micrometer-sized cones. The optical transmission ...
  • Theoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals 
    Yaremko, A.M.; Yukhymchuk, V.O.; Romanyuk, Yu.A.; Virko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Raman scattering in mixed MoS₂/MoSe₂ layer type crystals was investigated in this work. The change of intensities and positions of bands for in-plane E¹₂g and outof-plane A₁g vibrations as functions of the “concentration” ...
  • Theory of high-field electron transport in the heterostructures AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs with delta-doped barriers. Effect of real-space transfer 
    Korotyeyev, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Steady-state electric characteristics of quantum heterostructures AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs with -doped barriers have been analyzed in this work. It has been shown that at high doping the additional low-conductive channels ...
  • Thermal annealing and evolution of defects in neutron-irradiated cubic SiC 
    Bratus, V.Ya.; Melnyk, R.S.; Shanina, B.D.; Okulov, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    A careful study of neutron-irradiated cubic SiC crystals (3С-SiC(n)) has been performed using electron paramagnetic resonance (EPR) in the course of their thermal annealing within the 200…1100 °C temperature range. Several ...
  • Thermostabilized photodiode for monitoring radiation of medical lasers 
    Dobrovolsky, Yu.; Pidkamin, L.; Kuzenko, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The construction of cooled photodiode for medical lasers with non-linearity of output performance in the range from 10⁻⁸ to 10⁻¹ W not more than 1.05 % is suggested. Regulation of cooling the crystal of photodiode is ...
  • Thin-film solar converters based on the p-Cu₁.₈S/n-CdTe surface-barrier structure 
    Bobrenko, Yu.N.; Pavelets, S.Yu.; Semikina, T.V.; Stadnyk, O.A.; Sheremetova, G.I.; Yaroshenko, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    A surface-barrier structure with the transparent p-Cu₁.₈S component was used to make thin-film polycrystalline n-CdTe-based solar converters. Cadmium telluride was grown on CdSe substrates using the quasi-closed volume ...
  • Vibrational states of hexagonal ZnO doped with Co 
    Kupchak, I.M.; Serpak, N.F.; Strelchuk, V.V.; Korbutyak, D.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Vibrational density of states of 12.5% cobalt doped bulk hexagonal ZnO has been studied using the density functional theory method. It has been shown that introduction of cobalt into ZnO leads to appearance of additional ...
  • Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions 
    Starchyk, M.I.; Marchenko, L.S.; Pinkovska, M.B.; Shmatko, G.G.; Varnina, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Structural and optical properties of single crystal silicon irradiated with 27.2 MeV helium ions by using fluences Ф ≥ 10¹⁶ ion/cm² were studied at various beam currents. It was found that at currents 0.25 to 0.45 μА, ...
  • Zinc oxide nanoparticles fabricated in the porous silica matrix by the sublimation method 
    Rudko, G.Yu.; Kovalenko, S.A.; Gule, E.G.; Bobyk, V.V.; Solomakha, V.M.; Bogoslovskaya, A.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The nanocomposite – nanoporous silica (SBA-16) containing ZnO quantum dots – was fabricated by the sublimation method. This novel route of synthesizing ZnO nanoparticles implies physical sorption of zinc acetylacetonate ...

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